Fabrication of ultra-low density and long-wavelength emission InAs quantum dots
| Data(s) |
2007
|
|---|---|
| Resumo |
By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Huang, SS (Huang, Shesong); Niu, ZC (Niu, Zhichuan); Ni, HQ (Ni, Haiqiao); Xiong, YH (Xiong, Yonghua); Zhan, F (Zhan, Feng); Fang, ZD (Fang, Zhidan); Xia, JB (Xia, Jianbai) .Fabrication of ultra-low density and long-wavelength emission InAs quantum dots ,JOURNAL OF CRYSTAL GROWTH,APR 2007,301(0):751-754 |
| Palavras-Chave | #半导体物理 #long wavelength |
| Tipo |
期刊论文 |
