Intrasubband and intersubband transitions in GaAs/AlxGa1-xAs multiple quantum wells


Autoria(s): Li, JM (Li, J. M.); Qian, KY (Qian, K. Y.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.)
Data(s)

2007

Resumo

Infrared absorption in GaAs/AlxGa1-xAs multiple quantum wells is investigated using a polarizer. Two main peaks, with wave numbers 723 and 1092 cm(-1), are observed. The peak with wave number 1092 cm(-1) corresponds to the 0 -> 1 intersubband transition, while the other one corresponds to the intrasubband transition. The polarized absorbance is one order of magnitude higher than the unpolarized one. The authors attribute the intrasubband transition to the plasma oscillation in the quantum wells.

Identificador

http://ir.semi.ac.cn/handle/172111/9528

http://www.irgrid.ac.cn/handle/1471x/64176

Idioma(s)

英语

Fonte

Li, JM (Li, J. M.); Qian, KY (Qian, K. Y.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.) .Intrasubband and intersubband transitions in GaAs/AlxGa1-xAs multiple quantum wells ,APPLIED PHYSICS LETTERS,APR 16 2007,90 (16):Art.No.162111

Palavras-Chave #半导体材料 #INFRARED PHOTODETECTORS
Tipo

期刊论文