Educar competencias emocionales en futuros profesores de Educaci??n F??sica

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Literatura i creixement personal

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El silenci a l'aula

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La evaluación de políticas socioculturales en municipios pequeños

La comunicació planteja la necessitat d’establir un sistema d’indicadors d’avaluació per a les polítiques socioculturals municipals a partir de la definició d’un marc conceptual d’aquestes polítiques i la revisió d’estudis i propostes d’indicadors d’avaluació en àmbits afins a la sociocultura

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation

Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature

Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV

Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05

Els Materials de construcció de la bòbila romana d’Ermedàs

Estudi i descripció dels materials de construcció d’un centre terrisser concret, la bòbila d’Ermedàs situada a la comarca del Pla de l’Estany. Mitjançant aquests materials pretén acostar-se a les formes socials, històriques, econòmiques i tècniques que es donaven a la bòbila i als seus entorns, i també comprendre el marc natural, geogràfic, polític i històric d’aquesta zona

Organització de l'assignatura de projectes en els estudis d'enginyeria tècnica agrícola

L’objectiu plantejat ha estat dissenyar i organitzar l’assignatura de Projectes dels estudis d’Enginyeria Tècnica Agrícola de manera que permeti que l’estudiant adquireixi les capacitats que necessita per a desenvolupar aquesta activitat a nivell professional

Competències digitals i professionals a través d'una webquest

La proposta que es presenta a continuació s’emmarca en el desenvolupament de l’assignatura Noves Tecnologies Aplicades a l’Educació als Estudis de Mestre de la Facultat d’Educació i Psicologia de la Universitat de Girona. Aquesta assignatura ja no forma part del pla d’estudis actual. Tot i així, durant els cursos que es va dur a terme, les activitats d’aprenentatge es van planificar de manera que anessin encaminades a adquirir els coneixements i les habilitats que havien de permetre als estudiants començar a assolir algunes de les competències que haurien de tenir en acabar els seus estudis. És per això que considerem que continua tenint vigència

Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

Oxidation of silicon: further tests for the interfacial silicon emission model

The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness