Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
| Data(s) |
01/05/1997
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| Resumo |
A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV |
| Formato |
application/pdf |
| Identificador |
Roura, P., López-de Miguel, M., Cornet, A., i Morante, J. R. (1997). Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy. Journal of Applied Physics, 81 (10), 6916 - 6920. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i10/p6916_s1 0021-8979 |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Relação |
Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365253 © Journal of Applied Physics, 1997, vol. 81, núm. 10, p. 6916-6920 Articles publicats (D-F) |
| Direitos |
Tots els drets reservats |
| Palavras-Chave | #Compostos d'alumini #Compostos d'indi #Fotoluminescència #Semiconductors #Aluminum compounds #Indium compounds #Photoluminescence |
| Tipo |
info:eu-repo/semantics/article |
