用硅离子注入方法制备的纳米硅的拉曼散射研究

于2010-11-23批量导入

二氧化硅覆盖退火增强磷化铟基体激光器材料的量子阱混合

对SiO_2覆盖退火增强InGaAs/InGaAsP/InP激光器材料量子阱混合技术进行了实验研究。相对于原始样品，退火时无SiO_2覆盖的样品经800℃，30s快速退火后，其光致发光谱的峰值波长“蓝移”了7nm,退火时有SiO_2覆盖的样品经过同样的快速退火后，其光致发光谱的峰值波长“蓝移”了56nm。即在同一片子上实现了在需要量子阱混合的区域带隙的“蓝移”足够大的同时，不希望量子阱混合的区域能带结构的变化创记录的大小。该文认为增大量子阱的宽度、采用无应力的量子阱结构以及引入足够厚的缓冲层可以改善量子阱材料的晶格质量，有利于提高量子阱混合技术的可靠性与重复性，改善量子阱材料的热稳定性。

1.27μm吸收型部分增益耦合MQW-DFB激光器

采用LP-MOCVD和LPE相结合,成功地研制出了吸收型部分增益耦合MQW-DFB激光器。扫描显微镜照片显示了清晰的被掩埋的吸收型增益耦合光栅,表明光栅掩埋生长前升温过程磷烷的保护是成功的。宽接触(broad area)脉冲电流大范围单纵模工作,条型器件室温连续直流工作阈电流为22mA至35mA,单模成品率高,边模抑制比(SMSR)超过37dB,没有观察到饱和吸收现象。

稀土铒和铬离子注入对电机护环钢SCC性能的影响

研究了铒和铬离子高、中能量重迭注入对50Mn18Cr4电机护环钢SCC性能的影响。SCC对比试验结果表明:(1)在QHJ-79标准硝酸盐介质中,离子注入试样的SCC出现时间(t_f)比不经注入试样的延长了6倍以上,致钝和维钝电流密度下降了一个数量级; (2)在阴极充氢条件下,两种试样均对氢致开裂(HIC)不敏感,但离子注入可抑制氢诱发腐蚀。用AES-PRO、RBS、XPS-PRO、EDAX、金相及电化学方法分析讨论了护环钢在QHJ-79标准介质中的SCC机 理和离子注入改善SCC抗力及抗氢锈发腐蚀性能的机制。

Co-Si多层膜在稳态热退火中的固相界面反应

于2010-11-23批量导入

Analysis of equilateral triangle semiconductor microlasers with rough sidewalls

The mode frequencies and quality factors are calculated for the equilateral triangle semiconductor microlasers with sinusoidal and random Gaussian sidewalls. The results show that the modes can still have high Q-factors.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions

Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5 mu m, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or in-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers.

基于GPU的球面深度图实时绘制

提出了一种GPU加速的实时基于图像的绘制算法.该算法利用极坐标系生成对物体全方位均匀采样的球面深度图像;然后根据推导的两个预变换公式将单幅球面深度图像预变换到物体包围球的一个与视点相关的切平面上,以生成中间图像;再利用纹理映射生成最终目标图像.利用现代图形硬件的可编程性和并行性,将预变换移植到Vertex Shader来加快绘制速度;利用硬件的光栅化功能来完成图像的插值,以得到连续无洞的结果图像.此外,还在Pixel Shader上进行逐像素的光照以及环境映射的计算,生成高质量的光照效果.最终,文章解决了算法的视点受限问题,并设计了一种动态LOD(Level of Details)算法,实现了一个实时漫游系统,保持了物体间正确的遮挡关系.