ANDERSON TRANSITION IN SILICON INVERSION-LAYERS

Autoria(s): KONG GL; LIAO XB; YANG XR; ZHANG DL; LIN SY
Data(s)

1981
Identificador

http://ir.semi.ac.cn/handle/172111/14819

http://www.irgrid.ac.cn/handle/1471x/101444
Idioma(s)

英语
Fonte

KONG GL; LIAO XB; YANG XR; ZHANG DL; LIN SY.ANDERSON TRANSITION IN SILICON INVERSION-LAYERS,CHINESE PHYSICS,1981,1(1):226-231
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital