Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.

Multimode Interference Couplers with Different Background Refractive Index *

A novel structure of MMI coupler with different background refractive index has been designed. With stronger optical confinement in multimode waveguides, more guided modes are excited to improve imaging quality. Two-dimensional finite difference beam propagation method (2-D FDBPM) was used to simulate this new structure and had proven that its imaging quality, in terms of power uniformity and excess loss, is much better than conventional structure. This structure can be applied in SOI rib waveguides by deep etching method.

纳米碳管模板法制取的GaP纳米棒拉曼光谱研究

报道了用纳米碳管模板法制备的GaP纳米棒的拉曼光谱特征，观测到声子限制效应引起的GaP纳米棒TO和LO模的红移，红移量一般在2－10cm^-1之间，与所测到的纳米棒的尺寸有关，在偏振特性研究中，发现GaP纳米棒的偏振特性不能用单根纳米棒的选择定则来解释，而与测量光斑内多根纳米棒的无序取向有关，无序程度越高，偏振特性的方向性越弱，当激发光功率增加时，GaP纳米棒的TO和LO模的频率显著减少，表明纳米棒中的激光加热效应比体材料中强很多，而且GaP纳米棒的拉曼散射强度随激发光功率的增加先饱和，然后减小，表明在强激发功率下GaP纳米棒中的缺陷会迅速增加。

GaP∶NLPE片的纵向载流子浓度分布

于2010-11-23批量导入

GS-MBE生长的GaP/Si的XPS研究

利用X射线光电子能谱(XPS)深度剖析方法对气体源分子束外延(GS-MBE)生长的GaP/Si异质结构进行了详细的分析。其结果表明

Ni＋注入n-GaP DLTS谱中Ni杂质能级的识别

在不同条件下退火的Ni~+注入n-GaP DLTS谱中观测到表观激活能在0.60～0.70eV范围内的多个多子峰和少子峰。对各样品掺杂层内的能带弯曲及Ni杂质各荷电状态浓度空间分布在DLTS测量的零偏-反偏过程中的变化进行了计算。结合分析实测各能级热发射率数据,对其中起源于Ni_(Ga)中心的DLTS峰作出了判断。

GaAs/GaP界面的X射线掠入射衍射分析

用掠入射全反射X射线衍射,结合常规X射线衍射,对GaAs/GaP应变层界面进行了研究,给出了界面失配度、薄膜晶胞的畸变和界面弛豫等结构参数。结果表明掠入射衍射(GID)是测定半导体薄外延膜界面结构的有效工具。

MBE GaAs/GaP（001）异质外延层结构参数的X射线双晶衍射研究

于2010-11-23批量导入

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Mode theory and analysis of planar array waveguides

Bloch modes can be excited in planar array due to its periodic lateral refractive index. The power coupled into each eigenmode of the array waveguides is calculated through the overlap integrals of the input field with the eigenmode fields of the coupled infinite array waveguides projected onto the x-axis. Low losses can be obtained if the transition from the array to the free propagation region is adiabatic. Due to the finite resolution of lithographic process the gap between the waveguides will stop abruptly, however, when the waveguides come into too close together. Calculation results show that losses will occur at this discontinuity, which are dependent on the ratio of the gap between the waveguides and grating pitch and on the confinement of field in the array waveguides. Tapered waveguides and low index contrast between the core and cladding layers can lower the transmitted losses.

A study on GaP/Si heterostructures grown by GS-MBE

GaP/Si is a promoting heterostructure for Si-based optoelectronic devices since lattice constants of GaP and Si are so closed that they can match with each other. GaP was successfully grow on (100) Si subtracts by Gas-Source Molecular Bean Epitaxy (GS-MBE) in the study. The GaP/Si heterostructure was characterized by X-ray double crystal diffraction, Anger electron spectrograph, X-ray photonic spectrograph and photoluminescence (PL) measurements. The results showed that the epitaxial GaP layers are single crystalline, in which a parallel to and a (perpendicular to)are 0.54322 and 0.54625 nm, respectively. The peaks in PL spectra of GaP epitaxial layer grown on Si are 650, 627 and 640 nm, respectively. The study demonstrated that GaP/Si is a kind of lattice matched heterostructures and will be a promoting materials for future integrated photonics.

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

次生林林窗光环境时空特征及其对下层植被的影响

林窗是森林中经常发生的重要中小尺度干扰，在森林天然更新中起着重要作用。灌木和草本植物通过与乔木幼苗竞争林窗资源（尤其是光）而影响林窗树种更新，因此，研究林窗光环境时空特征及其与下层植被关系对揭示林窗树种更新机制具有重要意义。然而，林窗光环境的时空异质性及有效测量方法的缺乏导致这方面研究很少。本研究提出了林窗立体结构的相片测量法；基于林窗立体结构、坡度和坡向改进了目前广泛用于估测林窗光环境的林窗光指数(gap light index, GLI)模型，并提出了林窗内任意位置最大光照时长(potential sunshine duration, PSD)的计算方法；采用改进的GLI和PSD分析了东北次生林3个不同大小林窗（110，270，510 m2）及其对应的9个模拟林窗中2007年光环境的时空特征；通过在12个人工林窗中连续3年的植被调查，研究了林窗形成后前3年下层木本和草本植物对4个光强梯度的响应，主要结论如下： 1. 林窗立体结构和光环境的测量方法：1) 等角椭圆扇形法计算的林窗面积比目前使用较多的等角多边形法具有更高的精度；2) 半球面影像法可以测量林窗面积和形状，且精度较高；3) 双半球面影像法不仅可以测量林窗面积、形状，还可以测量任意方位林窗边缘木高度；4) 改进的GLI可以快速、精确计算林窗任意位置的直射光和散射光；5) PSD可用于分析林窗光照强度时空特征。 2. 东北次生林林窗光环境时空特征：1) 水平空间结构（地面层）：光环境空间异质性高，最大值位于林窗北部，坡向对光分布格局影响大而对光强影响小，光强随林窗面积的增大和边缘木高度的降低而增加；2) 垂直空间结构（林窗南北轴）：不同高度层光强最大值均位于林窗南北轴中心偏北，南北轴距地面越高光强最大值则越靠近轴中心；光强随距地面高度下降而衰减，最大衰退速率点位于轴中心偏南，靠近该点光强衰退线呈指数形，远离该点则趋于直线形；3) 光成分特征（地面层南北轴）：南坡林窗整个南北轴上直射光大于散射光，北坡模拟林窗南半轴散射光大于直射光，而北半轴相反；南坡林窗中直射光的均值及其变化范围都比其对应的北坡模拟林窗大，然而，坡向对散射光影响不大；南坡林窗和北坡模拟林窗北半轴的全光和直射光均比南半轴大，但散射光没有这种显著的规律；4) 时间特征：不同月份PSD在相同大小林窗中分布格局十分相似，6月份林窗中被光照射面积和PSD均值最大，而10月份最小；各月PSD在南北轴上从南到北逐渐增加，在东西轴上自西向东缓慢增加。 3. 林窗早期下层植被对光强梯度的响应：1) 木本植物物种丰富度随光照强度的增加而增高，且在林窗形成后的第2和3年均存在显著相关性；2) DCA排序第一轴表明，木本植物物种组成仅第1年在4个光强梯度间存在显著差异，而在各年间存在显著差异；草本植物物种组成在4个光强梯度上存在显著差异，但在各年间不存在显著差异；3) 木本植物生物体积(biovolume)随光强梯度升高而增加，而植株密度不存在显著变化；生物体积逐年增加，平均年增长率为20.3%，植株密度逐年下降，平均年减少率为30.0%；4) 草本层盖度和高度在4个光强梯度间均不存在显著差异，但在林窗形成后的第2、3年均显著比第1年大。