Study on optical band gap of boron-doped nc-Si : H film
Data(s) |
2002
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Resumo |
The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films. The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:09导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:09Z (GMT). No. of bitstreams: 1 2833.pdf: 880670 bytes, checksum: 77bb27d415a839682b4d72041c12bdf3 (MD5) Previous issue date: 2002 Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc. Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China; Beijing Univ Aeronaut & Astronaut, Inst Opt Elect, Beijing 100083, Peoples R China; Chinese Acad Sci, Inst Semicond, Natl Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
WORLD SCIENTIFIC PUBL CO PTE LTD JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE |
Fonte |
Wei WS; Wang TM; Zhang CX; Li GH; Han HX; Ding K .Study on optical band gap of boron-doped nc-Si : H film .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4327-4330 |
Palavras-Chave | #半导体材料 #AMORPHOUS-SILICON |
Tipo |
会议论文 |