Local lifetime engineering in 600V pin diode using mix-mode simulation

This paper reports a detailed analysis of the effect of local lifetime killing (LLK) within the drift region on the reverse recovery (RR) characteristics and on-state performance of 600V Silicon PiN diodes. The paper also discusses the influence of the measurement circuit on the reverse recovery of the high voltage diodes and it proposes a simple and effective mix-mode simulation tool for an accurate assessment of the diode performance in reverse recovery mode. © 2013 IEEE.

GaAs/AlGaAs MQW材料激子吸收谱的电场效应及pin结构自电光效应器件（SEED)的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

高速PIN 光电探测器的散射参量测量和TO 封装

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

PIN结构氮化镓基紫外探测器及其制作方法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

提高GaN基pin结构性能的紫外探测器及制作方法

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1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

高锗组分PIN锗硅光电探测器设计与模拟

介绍了Si1-xGex合金材料在制作新型光电子器件方面的重要作用,描述了应变SiGe层的特性,包括其临界厚度与Ge组分的关系、能带变窄、折射率增加,以及应变SiGe层的亚稳态特性.设计了应变锗硅缓冲层上的高Ge组分PIN光电探测器的外延材料和结构,采用Silvaco软件分别对光电探测器的器件结构、光谱响应、响应电流及其随入射光功率的变化、器件的暗电流进行了模拟,结果显示,探测器有源区面积增大,其响应电流也增大,且暗电流比其响应电流小6～8个数量级;探测器的响应时间约为3.8x10~(-9)s;探测器在850nm左右具有较好的光响应;这些结果都比较理想.采用L-edit软件设计了该光电探测器的结构,最后对研究结果做出总结.

非晶硅Pin二极管的1MeV电子幅照效应

报道a-Si:H本征膜及Pin二极管的1MeV1.4×10~(15),4.2×10~(15),8.4×10~(15)/cm~2电子幅照实验结果和退火行为。测量了电子辐照对a-Si:H光暗电导率和光致发光谱的影响，以及a-Si:H Pin二极管光伏特性和光谱响应随电子辐照剂量的变化。发现电子辐照在a-Si:H本征膜和二极管中引起严重的损伤，和二极管光谱响应的峰值“红移”。但未见饱和现象，还观测到明显的室温恢复现象；但高温退火处理后未能完全恢复。该文对以上实验结果给出了合理的解释。

MOCVD生长的平面型InGaAs/InP PIN光电探测器件

讨论了采了MOCVD技术生长的平面型InGaAs／InP PIN器件的光学特性及制备工艺。通过引入InP窗口层并制备合适的抗反射膜, 提高了器件的量子效率, 达到～90％, 采用平面型结构有可能改善器件的稳定性和可靠性。图3参5

电制冷Si-PIN X射线谱仪的研制

X射线谱仪以其多用途、无损、操作简单、快速、价格低廉和运行费用很低等优点，己经成为应用最为广泛的多元素分析仪器。采用液氮冷却的X射线谱仪在荧光分析技术领域得到广泛的应用和普遍认可。液氮制冷的一个主要缺点是必须有一个液氮存储罐作为完整谱仪的一部分。从而，在实际应用中受到液氮价格贵和液氮供应厂少的限制，大大地制约了该种谱仪的进一步推广使用。如果能采用另外的技术得到足够低的温度，在此温度下探测器具有极低的漏电流，也可使X射线谱仪有极低的噪声和相当好的能量分辨率；因此克服上述限制就成为一个有重要意义的课题方向。本文在国内首次实现采用半导体电制冷技术对平面离子注入（Si一PIN）探测器制冷，降低探测器漏电流至10~(-13)以下，配合低噪声脉冲光反馈前放，成功地使得整个x射线谱仪能量分辨率达到262eV（对~(55)Fe的Mn Kα K射线）。虽然电制冷X射线谱仪的分辨率没有采用液氮冷却的好，但是它的性能已足够在包括利用X射线能量分离进行荧光分析等多种应用所需。考虑到元素周期表中钾元素以上的毗邻两元素的Ka特征X射线的能量差在380eV以上；例如，K和Ca的峰线宽分别是243eV和245 eV，由此得到电制冷X射线谱仪己可完成对K, C a和更高Z的元素进行能散荧光分析工作。并且，液氮罐的取消可方便的设计在野外使用的便携式X射线荧光分析设备。 文中全面介绍了X射线谱仪的各个组成部分和其背景知识。并详细描述了探测器系统、电制冷系统和低噪声电子学系统，充分展示了研制X射线谱仪的关键所在。最后给出了电制冷X射线谱仪的测试结果和应用设计。

Ferrochelatase is a conserved downstream target of the blue light-sensing White collar complex in fungi.

Light is a universal signal perceived by organisms, including fungi, in which light regulates common and unique biological processes depending on the species. Previous research has established that conserved proteins, originally called White collar 1 and 2 from the ascomycete Neurospora crassa, regulate UV/blue light sensing. Homologous proteins function in distant relatives of N. crassa, including the basidiomycetes and zygomycetes, which diverged as long as a billion years ago. Here we conducted microarray experiments on the basidiomycete fungus Cryptococcus neoformans to identify light-regulated genes. Surprisingly, only a single gene was induced by light above the commonly used twofold threshold. This gene, HEM15, is predicted to encode a ferrochelatase that catalyses the final step in haem biosynthesis from highly photoreactive porphyrins. The C. neoformans gene complements a Saccharomyces cerevisiae hem15Delta strain and is essential for viability, and the Hem15 protein localizes to mitochondria, three lines of evidence that the gene encodes ferrochelatase. Regulation of HEM15 by light suggests a mechanism by which bwc1/bwc2 mutants are photosensitive and exhibit reduced virulence. We show that ferrochelatase is also light-regulated in a white collar-dependent fashion in N. crassa and the zygomycete Phycomyces blakesleeanus, indicating that ferrochelatase is an ancient target of photoregulation in the fungal kingdom.

Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.