1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

National High Technology Research and Development Program of China 2006AA03Z415 National Basic Research Program of China 2007CB613404 2006CB302802 National Natural Science Foundation 60676005 Manuscript received June 24, 2009; revised September 19, 2009 and October 13, 2009. First published October 30, 2009; current version published November 25, 2009. This work was supported in part by the National High Technology Research and Development Program of China under Grant 2006AA03Z415, in part by the National Basic Research Program of China under Grant 2007CB613404 and Grant 2006CB302802, and in part by the National Natural Science Foundation under Grant 60676005.