提高GaN基pin结构性能的紫外探测器及制作方法
| Data(s) |
09/01/2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Made available in DSpace on 2009-06-04T08:36:35Z (GMT). No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5) Previous issue date: 2008-08 Made available in DSpace on 2009-06-11T08:58:15Z (GMT). No. of bitstreams: 1 full/200610111261.pdf: 591500 bytes, checksum: ba3b73993750d6222438ae612b41e4d7 (MD5) Previous issue date: |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
赵德刚;杨辉;梁骏吾;李向阳;龚海梅,提高GaN基pin结构性能的紫外探测器及制作方法 ,200610111261 ,20060817 |
| Tipo |
专利 |
