PIN结构氮化镓基紫外探测器及其制作方法


Autoria(s): 赵德刚; 杨辉
Data(s)

15/03/2006

Resumo

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Identificador

http://ir.semi.ac.cn/handle/172111/3195

http://www.irgrid.ac.cn/handle/1471x/61079

Idioma(s)

中文

Fonte

赵德刚;杨辉,PIN结构氮化镓基紫外探测器及其制作方法 ,CN200410074363.6,20040910

Tipo

专利