Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.

Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantum well laser structure

Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free vacancy diffusion (IFVD) is investigated using photoluminescence. It has been demonstrated that the effects of the plasma bombardment to the:sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has been discussed.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

新型选择性磁共振成像造影剂的设计、合成及性质

近年来，随着磁共振血管造影（magnetic resonance angiography，MRA）、功能磁共振成像（fuectional MRI）、灌注磁共振成像中erfusion MRI）、扩散加权磁共振成像（diffusion weigllted MRI）等新M班技术的发展和在临床诊断应用中的普及，磁共振成像造影剂的研究和开发已经成为一个日益重要的研究领域。其中大分子造影剂由于具有弛豫效率高、在血池中停留时间长及可能的组织、器官选择性等特点更是受到MRI造影剂研究者的广泛关注。论文工作围绕新型MRI造影剂的研制进行了较系统的研究，主要实验结果归纳如下：（1）以天然多糖为载体的M斑造影剂设计合成了四种天然多糖修饰的Gd-DTPA配合物：AG-（Gd-DTPA）n、PQPS-（Gd-DTPA）n、GAPS-（Gd-DTPA）n和EAPS-（Gd-DTPA）。通过体外弛豫时间测试和体内磁共振成像实验研究其弛豫性能、器官选择性、体内滞留时间和代谢情况，结合体外稳定性和溶血性综合评价了其应用于临床的可能性。研究结果表明，不同类型多糖Gd-DTPA配合物在水溶液中弛豫性能相近，为Gd-DTPA的1.5-2.0倍，对肝脏信号的增强效果是Gd-DTPA的3.0倍左右，并且能在较长时间内产生稳定良好的增强效果。肝脏信号的增强效果随多糖Gd-DTPA配合物分子量的增加基本呈现出升高趋势，表明分子量影响其肝脏分布，分子量越大越易于在肝脏积累。其中，AG-（GdDTPA）n表现出了良好的肝脏选择性和肾脏代谢性能，有望成为有前景的肝脏选择性造影剂。而EAPS-（Gd-DTPA）n在肾脏中的代谢速率较慢，这一特性在磁共振血管造影及灌注磁共振成像的研究中极有帮助。（2）稀土杂多配合物M班造影剂设计合成了三种夹心型稀土杂多配合物：K13［Gd（Siw11O39）］、K11H6［Gd3O3（SiWgO34）2］及K17［Gd（PZW17O61）2］，通过体外弛豫性能、稳定性、溶血性及体内急性毒性、磁共振成像实验，对其体外体内的增强效果和安全性进行了较全面的评价。K13［Gd（SIWllO39）2］和K17〔Gd（PZwl7o61）2］在水溶液中的弛豫效率略高于Gd-DTPA，而K11H6［Gd3O3（SiW9O34）2］在水溶液中的弛豫效率是Gd-DTPA的3.5倍左右。磁共振成像实验表明：K13［Gd（SIWll。动2］、K11H6［Gd3O3（siwgo34）2」和K17［Gd（P ZwI7o61）2］对肝脏产生的增强效果分别为Gd-DTPA的1.5、2.5和3.5倍左右，对肾脏的增强效果不及Gd-DTPA。通过与磷钨杂多配合物的比较发现，具有相同构型的稀土杂多配合物对肝脏和肾脏产生的增强效果相近，肝脏信号增强的顺序为Gd（凡wl7）2＞Gd3（XW9）2＞Gd（XW11）2，肾脏信号增强的顺序为Gd3（XW9）2≈Gd（XW11）2＞Gd（X2W17）2。总体来说，稀土杂多配合物在体内的分布和代谢是由其构型、离子大小、所带负电荷等因素决定的，受结构中的杂原子影响不大。

HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.

A NEW METHOD FOR MEASURING THE EFFECTIVE DIFFUSION CONSTANT OF 2-DIMENSIONAL ELECTRONS IN THE PRESENCE OF MAGNETIC-FIELDS

The transient charge response Q(t) of a two-dimensional electron gas (2DEG) in GaAs/AlxGa1-xAs heterostructures to a small pulse of the gate voltage, applied between the top gate and source electrodes in a Corbino structure, was employed to directly measure the effective diffusion constant of a 2DEG in the quantum Hall regime. The measured diffusion constant D showed a drastic change as the magnetic field was swept through the integer fillings of the Landau levels.

808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.

Diffusion of ion implanted as in Si1-xGex epilayers

Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation

Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO_2 encapsulation is reported. A maximum band gap wavelength blue-shift as large as 200nm is realized. Furthermore, an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the asgrown one.

Light induced rapid thermal diffusion of boron atom in silicon

国家自然科学基金