Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation
| Data(s) |
2003
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|---|---|
| Resumo |
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO_2 encapsulation is reported. A maximum band gap wavelength blue-shift as large as 200nm is realized. Furthermore, an FP laser blue-shifted 21nm by QWI is fabricated with characteristics comparable with the asgrown one. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhang Jing;Lu Yu;Wang Wei.Quantum Well Intermixing of InGaAsP QWs by Impurity Free Vacancy Diffusion Using SiO_2 Encapsulation,半导体学报,2003,24(8):785-788 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
