High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing


Autoria(s): Kai Zheng; Tao Lin; Li Jiang; Jun Wang; Suping Liu; Xin Wei; Guangze Zang; Xiaoyu Ma
Data(s)

2006

Resumo

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

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The research was supported by the National Natural Science Foundation of China

Institute of Semiconductors, Chinese Academy of Sciences

The research was supported by the National Natural Science Foundation of China

Identificador

http://ir.semi.ac.cn/handle/172111/16415

http://www.irgrid.ac.cn/handle/1471x/102246

Idioma(s)

英语

Fonte

Kai Zheng;Tao Lin;Li Jiang;Jun Wang;Suping Liu;Xin Wei;Guangze Zang;Xiaoyu Ma.High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing,Chinese Optics Letters,2006,4(1):27-29

Palavras-Chave #半导体器件
Tipo

期刊论文