High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
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2006
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Resumo |
The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD. The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD. 于2010-11-23批量导入 zhangdi于2010-11-23 13:02:17导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:02:17Z (GMT). No. of bitstreams: 1 4125.pdf: 257493 bytes, checksum: c152edf5540ec1a9fed683af4b1a7db4 (MD5) Previous issue date: 2006 The research was supported by the National Natural Science Foundation of China Institute of Semiconductors, Chinese Academy of Sciences The research was supported by the National Natural Science Foundation of China |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Kai Zheng;Tao Lin;Li Jiang;Jun Wang;Suping Liu;Xin Wei;Guangze Zang;Xiaoyu Ma.High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing,Chinese Optics Letters,2006,4(1):27-29 |
Palavras-Chave | #半导体器件 |
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期刊论文 |