Exciton localization due to isoelectronic substitution in ZnSTe

We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-related bound exciton emission dominates the radiative recombination. Localization nature of IEC bound exciton emissions in both S-rich and Te-rich side ZnSTe alloys are studied in detail. (c) 2006 Elsevier B.V. All rights reserved.

Photon localization and lasing in disordered GaNxAs1-x optical superlattices

We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaNxAs1-x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfer-matrix simulation suggests photon localization occurs at the lasing modes.

Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

The optical properties of two kinds of InGaN/GaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Ruhle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaN/GaN layered heterostructures. (c) 2006 American Institute of Physics.

Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate

Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T < 70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. (C) 2001 American Institute of Physics.

Bloch oscillation under a bichromatic laser: Dynamical delocalization and localization, persistent terahertz emission, and harmonics generation

A novel AC driving configuration is proposed for biased semiconductor superlattices, in which the THz driving is provided by an intense bichromatic cw laser in the visible light range. The frequency difference between two components of the laser is resonant with the Bloch oscillation. Thus, multi-photon processes mediated by the conduction (valence) band states lead to dynamical delocalization and localization of the valence (conduction) electrons, and to the formation and collapse of quasi-minibands. Thus, driven Bloch oscillators are predicted to generate persistent THz emission and harmonics of the dipole field, which are tolerant of the exciton and the relaxation effects.

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.

新外显子的起源与功能及短同源序列介导转录滑动产生嵌合RNA 的研究

新外显子的起源是一种重要的增加转录组和蛋白质组多样性的分子机制。 对于新外显子及其父本基因的进化和功能特征方面还有很多重要的问题有待于 解决。本研究首先在全基因组水平上鉴定在人和小鼠中产生的新外显子，随后 对这些外显子及其父本基因作进化和功能上的分析。我们发现新外显子倾向于 位于基因的UTR 区域，尤其是5’ UTR 区域，这表明可能有些新外显子的出现 与基因的表达调控相关。我们还发现，产生新外显子的基因具有较高的组织表 达特异性，其基因功能倾向于细胞调控和与外界环境相互作用。通过对外群中 直系同源基因的分析，我们的结果表明进化速率较高的基因更容易获得新的外 显子，纠正了先前认为的获得新外显子会加速基因进化速率的看法。 我们对哺乳类CDYL 基因家族中产生的新外显子进行了具体的进化分析和 功能研究。我们的结果表明CDYL 基因在哺乳类分化前在原先的基因上游区域 获得了一个新的启动子和三个新的外显子。随后在哺乳动物各个支系的分化中， CDYL 基因在小鼠，狗和人中分别独立的进化出一个新的外显子。同源比对的 结果表明，这些新外显子是通过内含子序列的外显子化这一分子机制产生。近 缘物种间的进化速率的计算结果表明这些新产生的外显子具有快速进化的模 式，并且其快速进化可能是由正选择所驱动。在人中，多种突变包括新外显子 的获得，启动子的改变，选择性剪切的发生使得人的CDYL 基因获得了一种新 的编码更长蛋白质的剪切体。在人Hela 细胞系中的实验表明，新产生的蛋白质 与原有的蛋白质相比都具有显著的转录抑制活性，但新的蛋白质的转录抑制活 性较弱，且两者之间存在相互干扰的关系。这一结果表明通过新外显子的获得 产生的新的蛋白质可以丰富原有的基因表达调控体系，使得生物体的调控网络 更加精确。 嵌合RNA 通常认为是由来源于不同的pre-mRNA 的外显子通过反式剪切连 接在一起形成的。这一现象在包括多种动物和植物中被广泛的报道。我们的研 究首先通过大规模表达序列（ESTs）的搜索，在酵母，果蝇，小鼠和人中鉴定 到了大量的嵌合RNA。这一结果表明形成嵌合RNA 在真核生物中是一种普遍 的生物学过程，是一种重要的增加转录组和蛋白质组的多样性的分子机制。对 嵌合RNA 的序列分析表明，仅有<20%的嵌合RNA 在接合处可以找到典型的剪切位点 GU-AG，可以用经典的反式剪切模型来解释其产生机制。然而有意思的 是，我们在大约一半的嵌合RNA 的供体基因之间找到了短的同源序列，这一发 现使我们提出了一种新的分子机制来解释这些嵌合RNA 的形成，我们称之为 “转录滑动”模型。在酵母我们，我们用实验的方法验证了短同源序列对形成嵌 合RNA 的必要性，有力地支持了我们这一模型。

WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES

We have observed Wannier-Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 mum, based on Wannier-Stark localization effects.

WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD

We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons.