WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES
Data(s) |
1993
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Resumo |
We have observed Wannier-Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 mum, based on Wannier-Stark localization effects. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
LIU W; ZHANG YH; JIANG DS; WANG RZ; ZHOU JM; MEI XB.WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES,JOURNAL OF APPLIED PHYSICS,1993,74(6):4274-4276 |
Palavras-Chave | #半导体物理 #ROOM-TEMPERATURE #FIELD |
Tipo |
期刊论文 |