Photon localization and lasing in disordered GaNxAs1-x optical superlattices


Autoria(s): Sun BQ; Jiang DS
Data(s)

2006

Resumo

We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaNxAs1-x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfer-matrix simulation suggests photon localization occurs at the lasing modes.

Identificador

http://ir.semi.ac.cn/handle/172111/10632

http://www.irgrid.ac.cn/handle/1471x/64512

Idioma(s)

英语

Fonte

Sun BQ; Jiang DS .Photon localization and lasing in disordered GaNxAs1-x optical superlattices ,PHYSICAL REVIEW B,2006,73(19):Art.No.195112

Palavras-Chave #半导体物理 #RANDOM LASER #SCATTERING #MEDIA #LIGHT #ABSORPTION #CAVITIES #GAIN
Tipo

期刊论文