LOCALIZATION OF EXCITONS TO CU-RELATED DEFECTS IN GAAS

Autoria(s): MONEMAR B; GISLASON HP; WANG ZG
Data(s)

1985
Identificador

http://ir.semi.ac.cn/handle/172111/14741

http://www.irgrid.ac.cn/handle/1471x/101405
Idioma(s)

英语
Fonte

MONEMAR B; GISLASON HP; WANG ZG.LOCALIZATION OF EXCITONS TO CU-RELATED DEFECTS IN GAAS,PHYSICAL REVIEW B,1985,31(12):7919-7924
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital