Exciton localization due to isoelectronic substitution in ZnSTe
| Data(s) |
2007
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| Resumo |
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-related bound exciton emission dominates the radiative recombination. Localization nature of IEC bound exciton emissions in both S-rich and Te-rich side ZnSTe alloys are studied in detail. (c) 2006 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, Z (Sun, Z.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Li, GH (Li, G. H.); Sou, IK (Sou, I. K.); Ge, WK (Ge, W. K.) .Exciton localization due to isoelectronic substitution in ZnSTe ,JOURNAL OF LUMINESCENCE,JAN-APR 2007,122 Sp.Iss.SI (0):402-404 |
| Palavras-Chave | #半导体物理 #PRESSURE |
| Tipo |
期刊论文 |
