LOCALIZATION EFFECTS, ENERGY RELAXATION, AND ELECTRON AND HOLE DISPERSION IN SELECTIVELY DOPED NORMAL-TYPE ALYGA1-YAS/INXGA1-XAS/GAAS QUANTUM-WELLS
| Data(s) |
1990
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
BUTOV LV; KULAKOVSKII VD; ANDERSSON TG; CHEN ZG.LOCALIZATION EFFECTS, ENERGY RELAXATION, AND ELECTRON AND HOLE DISPERSION IN SELECTIVELY DOPED NORMAL-TYPE ALYGA1-YAS/INXGA1-XAS/GAAS QUANTUM-WELLS,PHYSICAL REVIEW B,1990,42(15):9472-9479 |
| Palavras-Chave | #半导体物理 |
| Tipo |
期刊论文 |
