WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD
Data(s) |
1992
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Resumo |
We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
ZHANG YH; JIANG DS; LI F; ZHOU JM; MEI XB.WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD,JOURNAL OF APPLIED PHYSICS,1992,72(7):3209-3211 |
Palavras-Chave | #半导体物理 #EXCITON STARK LADDER #SEMICONDUCTOR SUPERLATTICES #ABSORPTION-EDGE #BLUE SHIFT #QUANTIZATION |
Tipo |
期刊论文 |