Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Influence of strain on annealing effects of In(Ga)As quantum dots

Post-growth rapid thermal annealing has been performed with In(Ga)As quantum dots (QDs) at different strain statuses. It is confirmed that the strain-enhanced interdiffusion decreases the inhomogeneous size distribution. The preferential lateral interdiffusion of QDs during annealing was observed. we attribute it to the naturally anisotropic strain distribution in/around the dots and the saturation of strain difference between the base boundary and the top of the dots. There exist strain-enhanced mechanism and vacancy diffusion enhanced mechanism during the annealing. As to which one dominates the QD interdiffusion depends on the thickness of capping layer and the annealing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

The study on high efficient AlxGa1-xAs/GaAs solar cells

The investigation of AlxGa1-xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I-V characteristics, dark I-V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2 x 2cm(2), 25 degreesC) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Desorption and Ripening of Low Density InAs Quantum Dots

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by Xray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Energy exchange between the atmosphere and a meadow ecosystem on the Qinghai-Tibetan Plateau

To reveal the potential contribution of grassland ecosystems to climate change, we examined the energy exchange over an alpine Kobresia meadow on the northeastern Qinghai-Tibetan Plateau. The annual pattern of energy exchange showed a clear distinction between periods of frozen soil with the daily mean soil temperature at 5 cm (T-s5 ≤ 0 ° C) and non-frozen soil (T-s5 > 0 ° C). More than 80% of net radiation was converted to sensible heat (H) during the frozen soil period, but H varied considerably with the change in vegetation during the non-frozen soil period. Three different sub-periods were further distinguished for the later period: (1) the pre-growth period with Bowen ratio (β) > 1 was characterized by a high β of 3.0 in average and the rapid increase of net radiation associated with the increases of H, latent heat (LE) and soil heat; (2) during the Growth period when β ≤ 1, the LE was high but H fluxes was low with β changing between 0.3 and 0.4; (3) the post-growth period with average β of 3.6 when H increased again and reached a second maximum around early October. The seasonal pattern suggests that the phenology of the vegetation and the soil water content were the major factors affecting the energy partitioning in the alpine meadow ecosystem. © 2005 Elsevier B.V. All rights reserved.

Identification of senescence and death in Emiliania huxleyi and Thalassiosira pseudonana: Cell staining chlorophyll alterations and dimethylsulfoniopropionate (DMSP) metabolism

We measured membrane permeability, hydrolytic enzyme, and caspase-like activities using fluorescent cell stains to document changes caused by nutrient exhaustion in the coccolithophore Emiliania huxleyi and the diatom Thalassiosira pseudonana, during batch-culture nutrient limitation. We related these changes to cell death, pigment alteration, and concentrations of dimethylsulfide (DMS) and dimethylsulfoniopropionate (DMSP) to assess the transformation of these compounds as cell physiological condition changes. E. huxleyi persisted for 1 month in stationary phase; in contrast, T. pseudonana cells rapidly declined within 10 d of nutrient depletion. T. pseudonana progressively lost membrane integrity and the ability to metabolize 5-chloromethylfluorescein diacetate (CMFDA; hydrolytic activity), whereas E. huxleyi developed two distinct CMFDA populations and retained membrane integrity (SYTOX Green). Caspase-like activity appeared higher in E. huxleyi than in T. pseudonana during the post-growth phase, despite a lack of apparent mortality and cell lysis. Photosynthetic pigment degradation and transformation occurred in both species after growth; chlorophyll a (Chl a) degradation was characterized by an increase in the ratio of methoxy Chl a : Chl a in T. pseudonana but not in E. huxleyi, and the increase in this ratio preceded loss of membrane integrity. Total DMSP declined in T. pseudonana during cell death and DMS increased. In contrast, and in the absence of cell death, total DMSP and DMS increased in E. huxleyi. Our data show a novel chlorophyll alteration product associated with T. pseudonana death, suggesting a promising approach to discriminate nonviable cells in nature.

Valor percebido e a nova lógica dominante de serviço : estudo da indústria brasileira de equipamentos de refrigeração para transporte de cargas

Levitt (1960) apresentou o termo Miopia em Marketing e discutiu sobre o perigo de as organizações centralizarem seu foco no produto e descuidarem da real necessidade dos clientes, já que o produto é apenas um meio para atender à necessidade do cliente e não o fim em si. Na mesma linha, Shostack (1977), quase duas décadas mais tarde, enfatizou a urgência de se entender a posição do Marketing na economia pós-industrial de serviços, em que a lógica tradicional focada em produtos não mais atendia adequadamente o mercado. Portanto, não é recente a visão de que a posse do bem físico é secundária para o atendimento das necessidades do consumidor, sendo fundamental pensar no benefício que o bem proporciona ao cliente quando do seu uso. Mais recentemente, Vargo e Lusch (2004a) retomaram a discussão sobre a importância de as organizações atentarem para as necessidades dos clientes em vez de apenas focarem na transação, ou seja, na ideia de troca de um produto por um valor monetário. Estes autores emergiram novamente com a ideia de que as empresas precisam entregar benefícios aos seus clientes e a que apropriação do serviço gerado pela oferta da empresa é mais importante do que a transferência de posse do bem físico. Eles retomam, desta forma, as ideias de Levitt e Shostack e as modificam para criar a Service-Dominant Logic ou S-D Logic, como eles denominam. A ênfase desta proposta é que o Marketing deixe de considerar a transação de produtos ou serviços como central para a criação de valor, para uma lógica centrada no serviço produzido pelo bem – produto ou serviço. Assim, passa ser fundamental entender como o valor é percebido pelo cliente na fase de uso e focar os esforços na geração desse valor, possibilitando, assim, que empresas que entendam as reais necessidades do mercado, criem vantagem competitiva sustentável. Considerando a proposta destes autores, este trabalho testou a aplicação deste conceito na indústria de equipamentos de refrigeração para transporte de cargas com temperatura controlada no Brasil. Foram entrevistados seis importantes transportadores de carga frigorificada do país, os quais foram questionados sobre o valor do serviço usufruído pela posse do bem em contraposição ao valor percebido de usufruir o serviço sem ter que comprar o bem para tal. Os entrevistados associam muito valor à posse do bem, pois, para eles, isso garante que o serviço não sofrerá interrupções, algo muito valioso para eles. Isso evidencia uma falta de confiança nas alternativas possíveis à compra do ativo pela empresa. A confiança no prestador do serviço é, portanto, elemento chave na avaliação dos benefícios, reforçando achados de estudos anteriores. Foram identificadas diferenças de atribuição de valor para as propostas alternativas de fornecimento em razão da relevância do serviço de transporte refrigerado para a empresa – negócio central ou função de apoio para o negócio central da empresa.

O desenvolvimento sustentável na ordem constitucional e sua promoção através do planejamento urbano

The man, being subject and object of their changes, has passed by many process to find a better life way. Since your existence, he finds to live in groups for make easy your life and make concrete yours desires. All by history, when the individual´s rights was establishment, collectives and lonely way, contribute for evaluate the relationship between individuals and they own, and them and state, which has a duty to those, positive or negative, depending on the case. The circle of fundamentals rights has been sustainable development and the concept of growth economy associated to the environment protection. This association reflect a apparent conflict between values very distinct, but the constitutional interpretation can be reunite both of them and make it live in harmony; values of environmental order and economical order can be exist together, as long as the state contribute to this. On the city, where the most of relationships happening, the urban plan appear how a effective way of sustainable development, finding the harmony between the growth economy and environment protection. To effective the socials functions of the city (inhabit, circulate, work and entertainment) and the citizen´s life quality, the city is the scenery that show how the urban plan, across established previously legal instruments, like the governmental public politics, to effective the right to development, right of third generation. The director plan how effective tool for local needs - obligation defined by Citizen Statute that contribute for the program linked defined by the urban plan. The state´s intervention on the private sector of citizen, and the restriction on their rights are be justified by the collective´s rights and their quality of life. So, in front the urban scenery has been the plan to make social functions of city, the healthy way of life, which is the sustainable development

Scaled down physical properties of semiconductor nanowires for nanoelectronics scaling up

Semiconductor nanowires (NWs) are one- or quasi one-dimensional systems whose physical properties are unique as compared to bulk materials because of their nanoscaled sizes. They bring together quantum world and semiconductor devices. NWs-based technologies may achieve an impact comparable to that of current microelectronic devices if new challenges will be faced. This thesis primarily focuses on two different, cutting-edge aspects of research over semiconductor NW arrays as pivotal components of NW-based devices. The first part deals with the characterization of electrically active defects in NWs. It has been elaborated the set-up of a general procedure which enables to employ Deep Level Transient Spectroscopy (DLTS) to probe NW arrays’ defects. This procedure has been applied to perform the characterization of a specific system, i.e. Reactive Ion Etched (RIE) silicon NW arrays-based Schottky barrier diodes. This study has allowed to shed light over how and if growth conditions introduce defects in RIE processed silicon NWs. The second part of this thesis concerns the bowing induced by electron beam and the subsequent clustering of gallium arsenide NWs. After a justified rejection of the mechanisms previously reported in literature, an original interpretation of the electron beam induced bending has been illustrated. Moreover, this thesis has successfully interpreted the formation of NW clusters in the framework of the lateral collapse of fibrillar structures. These latter are both idealized models and actual artificial structures used to study and to mimic the adhesion properties of natural surfaces in lizards and insects (Gecko effect). Our conclusion are that mechanical and surface properties of the NWs, together with the geometry of the NW arrays, play a key role in their post-growth alignment. The same parameters open, then, to the benign possibility of locally engineering NW arrays in micro- and macro-templates.

Fabrication, Electrical Characterization and Simulation of Thin Film Solar Cells: CdTe and CIGS Materials

CdTe and Cu(In,Ga)Se2 (CIGS) thin film solar cells are fabricated, electrically characterized and modelled in this thesis. We start from the fabrication of CdTe thin film devices where the R.F. magnetron sputtering system is used to deposit the CdS/CdTe based solar cells. The chlorine post-growth treatment is modified in order to uniformly cover the cell surface and reduce the probability of pinholes and shunting pathways creation which, in turn, reduces the series resistance. The deionized water etching is proposed, for the first time, as the simplest solution to optimize the effect of shunt resistance, stability and metal-semiconductor inter-diffusion at the back contact. In continue, oxygen incorporation is proposed while CdTe layer deposition. This technique has been rarely examined through R.F sputtering deposition of such devices. The above experiments are characterized electrically and optically by current-voltage characterization, scanning electron microscopy, x-ray diffraction and optical spectroscopy. Furthermore, for the first time, the degradation rate of CdTe devices over time is numerically simulated through AMPS and SCAPS simulators. It is proposed that the instability of electrical parameters is coupled with the material properties and external stresses (bias, temperature and illumination). Then, CIGS materials are simulated and characterized by several techniques such as surface photovoltage spectroscopy is used (as a novel idea) to extract the band gap of graded band gap CIGS layers, surface or bulk defect states. The surface roughness is scanned by atomic force microscopy on nanometre scale to obtain the surface topography of the film. The modified equivalent circuits are proposed and the band gap graded profiles are simulated by AMPS simulator and several graded profiles are examined in order to optimize their thickness, grading strength and electrical parameters. Furthermore, the transport mechanisms and Auger generation phenomenon are modelled in CIGS devices.