Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers


Autoria(s): Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC
Data(s)

15/10/2010

Resumo

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

zhangdi于2010-03-09批量导入

zhangdi于2010-03-09批量导入

Natl Steering Comm Nanotechnol.; Natl Ctr Nanosci Technol.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Minist Educ China.; Chinese Acad Sci.; China Assoc Sci & Technol.

[Wu, B. P.; Wu, D. H.; Xiong, Y. H.; Huang, S. S.; Ni, H. Q.; Xu, Y. Q.; Niu, Z. C.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

Natl Steering Comm Nanotechnol.; Natl Ctr Nanosci Technol.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Minist Educ China.; Chinese Acad Sci.; China Assoc Sci & Technol.

Identificador

http://ir.semi.ac.cn/handle/172111/8332

http://www.irgrid.ac.cn/handle/1471x/65865

Idioma(s)

英语

Publicador

AMER SCIENTIFIC PUBLISHERS

25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA

Fonte

Wu, BP;Wu, DH;Xiong, YH;Huang, SS;Ni, HQ;Xu, YQ;Niu, ZC.Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers .见:AMER SCIENTIFIC PUBLISHERS .JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA ,39845,9 (2): 1333-1336 Sp. Iss. SI FEB

Palavras-Chave #半导体化学 #InAs Quantum Dots
Tipo

会议论文