Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

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IEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc.

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

IEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc.