Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by Xray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.

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National Science Foundation of China 60776015 60976008; Special Funds for Major State Basic Research Project (973 program) of China 2006CB604907; 863 High Technology R&D Program of China 2007AA03Z402 2007AA03Z451

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National Science Foundation of China 60776015 60976008; Special Funds for Major State Basic Research Project (973 program) of China 2006CB604907; 863 High Technology R&D Program of China 2007AA03Z402 2007AA03Z451