Desorption and Ripening of Low Density InAs Quantum Dots

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.

zhangdi于2010-03-09批量导入

zhangdi于2010-03-09批量导入

Natl Steering Comm Nanotechnol.; Natl Ctr Nanosci Technol.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Minist Educ China.; Chinese Acad Sci.; China Assoc Sci & Technol.

[Huang, S. S.; Luo, Y.] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China; [Zhan, F.; Zhou, H. Y.] Beijing Normal Univ, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China; [Huang, S. S.; Niu, Z. C.; Ni, H. Q.; Xiong, Y. H.; Fang, Z. D.] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

Natl Steering Comm Nanotechnol.; Natl Ctr Nanosci Technol.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Minist Educ China.; Chinese Acad Sci.; China Assoc Sci & Technol.