A NEW RESULT IN TRANSIENT CURRENT EXPERIMENT ON A-SI-H P/I/N AND N/I/N DEVICES

The transient current response of a-Si:H in both p/i/n and n/i/n structures has been measured as a function of pulse intermittence and pulse amplitude. The results are consistent with the picture that in p/i/n samples the peculiar current response is caused by the competing contributions of electrons and holes which show themselves in different time scales.

GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration

InxGa1-xAs/InP (0.39 less than or equal to x less than or equal to 0.68) strained-layer quantum wells having 20 wells with thickness of 50 Angstrom in a P-i-N configuration were grown by gas source molecular beam epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory.

穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响

研究了GaN基p-i-n(p-AlGaN/i-GaN,n-GaN)结构紫外探测器的漏电机理.实验发现,在位错密度几乎相同的情况下,基于表面有较高密度的V形坑缺陷材料制备的器件表现出较高的反向漏电.进一步的SEM测试发现,这种V形坑穿透到有源区i-GaN、甚至n-GaN层.在制备p-AlGaN电极时,许多金属会落在V形坑中,从而与i-GaN形成了肖特基接触.有些甚至直接和n-GaN形成欧姆接触.正是由于并联的肖特基接触和欧姆接触的存在导致了漏电的增加.

p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响

研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明:较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度.

微量掺碳ne-SiC:H薄膜用于p-i-n太阳电池的窗口层

采用等离子增强化学气相沉积方法(PEVVD)制备了微量掺碳的p型纳米非晶硅碳薄膜(p-nc-SiC:H),反应气体为硅烷和甲烷,掺杂气体采用硼烷,沉积温度分别采用333 K,353 K和373 K.测量结果表明随着沉积温度增加和碳含量的增加,薄膜的光学带隙增加;薄膜具有较宽的带隙和较高的电导率,同时有较低的激活能(0.06 eV).Raman和XRD测量结果表明薄膜存在纳米晶.优化的p型纳米非晶硅碳薄膜作为非晶硅p-i-n太阳电池的窗口层,使得太阳电池的开路电压达到0.94 V.

背照式GaN／AlGaN p-i-n紫外探测器的制备与性能

文章研究了p-GaN／i—GaN／n-Al0.3Ga0.7N异质结背照式p-i—n可见盲紫外探测器的制备与性能。器件的响应区域为310～365nm，最大响应率为0．046A/W，对应的内量子效率为19％，优值因子R0A达到1．77×10^8Ω·cm^2，相应的在363nm处的探测率D^＊=2．6×10^12cmHz^1/2W^-1。

高量子效率前照式GaN基p-i-n结构紫外探测器

研究了Al0.1-Ga0.9N／GaN异质结p-i-n结构可见盲紫外探测器的制备与性能,P区采用Al组分含量为0．1的AlGaN外延材料形成窗口层，使340-365nm波段的紫外光可以直接透过P区到达i区并被吸收，有效提高了这个波段的响应率与量子效率,并且研究了不同P区AlGaN外延层厚度对探测器性能的影响，制备了两种不同P区厚度（0．1μm和0．15μm）的器件，测试结果表明，P区的厚度对200-340nm波段光吸收的量子效率影响较大，而i区的晶体质量的提高可以有效提高340-365nm波段光吸收的量子效率,并且当P区AlGaN厚度为0．15μm时，器件的峰值响应率达到0．214A／W，在考虑表面反射时外量子效率高达85．6％，接近理论极限，并且在零偏压时暗电流密度为3．16nA／cm^2,表明器件具有非常高的信噪比。

纳米非晶硅(na-Si:H)P-i-n太阳电池

该文报道了通过适当氢稀释(RH=15)和合适的衬底温度(Ts=170℃)下,用PECVD制备得到的宽带隙氢化纳米非晶硅(na-Si:H)薄膜,并将其用作pin太阳电池的本征层.经过电池结构和工艺条件的优化设计,在p/i,i/n界面插入渐变带隙缓冲层,制备出了glass/ITO/p-a-SiC:H/i-na-Si:H/n-nc-Si:H/Al结构的pin太阳电池.电池初始开路电压(Voc)高达0.94V,同时还能保证0.72的填充因子(FF).光电转换效率(Eff)达到8.35%(AM1.5,100mW/cm2).

快速退火对SiGe/Si多量子阱p-i-n光电二极管的影响（英文）

利用光电流谱，结合X射线双晶衍射研究了快速退火对Si_(1-x)Ge/Si多量子阱p-i-n光电二极管的影响。由于应变SiGe的部分弛豫和Si-Ge互扩散，退火后的二极管的截止波长有显著的减小。但是，在750-850℃范围内，波长蓝移量随着退火温度的增加而变化缓慢，而样品的光电流强度却随温度是先减弱而后又增强，这可能主要是由于在不同温度退火过程中失配位错的产生和点缺陷的减小造成的。

δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移

该文报告了在δ掺杂硅n-i-p-i结构多量子阱中使用光电流技术观测到吸收边的场驱动蓝移，它不同于在GaAs和GeSi超晶格中观察到的结果。这个新现象能够被载流子注入引起有效带隙的展宽所解释。基于有效质量近似，计算了自洽势和有效带隙随额外载流子浓度的变化，理论结果证实了实验结果的正确性。

In_xGa_(1-x)As/InP应变多量子阱P-i-N结构的GSMBE生长及X射线双晶衍射研究

国家863计划

非对称耦合双阱P-I-N结构的光伏谱研究

于2010-11-23批量导入

Electrostatic mode envelope excitations in e-p-i plasmas - application in warm pair ion plasmas with a small fraction of stationary ions

The nonlinear propagation of amplitude-modulated electrostatic wavepackets in an electron-positron-ion (e-p-i) plasma is considered, by employing a two-fluid plasma model. Considering propagation parallel to the external magnetic field, two distinct electrostatic modes are obtained, namely a quasi-thermal acoustic-like lower mode and a Langmuir-like optic-type upper one. These results equally apply in warm pair ion ( e. g. fullerene) plasmas contaminated by a small fraction of stationary ions ( or dust), in agreement with experimental observations and theoretical predictions in pair plasmas. Considering small yet weakly nonlinear deviations from equilibrium, and adopting a multiple-scales perturbation technique, the basic set of model equations is reduced to a nonlinear Schrodinger (NLS) equation for the slowly varying electric field perturbation amplitude. The analysis reveals that the lower ( acoustic) mode is mostly stable for large wavelengths, and may propagate in the form of a dark-type envelope soliton ( a void) modulating a carrier wavepacket, while the upper linear mode is intrinsically unstable, and thus favours the formation of bright-type envelope soliton ( pulse) modulated wavepackets. The stability ( instability) range for the acoustic ( Langmuir-like optic) mode shifts to larger wavenumbers as the positive-to-negative ion temperature ( density) ratio increases. These results may be of relevance in astrophysical contexts, where e-p-i plasmas are encountered, and may also serve as prediction of the behaviour of doped ( or dust-contaminated) fullerene plasmas, in the laboratory.