HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE

Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.

A NOVEL ODOR SENSOR COATED WITH A LIPID-MEMBRANE

In this paper, an interdigital electrode lipid film odour sensor (ILOS) is designed, fabricated and tested. It is made from a microfabricated chemiresistor coated with a synthetic multibilayer film. Nine odorants in gas phase at room temperature have been detected using the odour sensor. For most of the odorants, the relation between the response of the ILOS and odorant concentration obeys Stevens' power law, and there is a good correlation between the minimum odorant concentrations that give rise to a change of the sensor's conductance and human olfactory thresholds.

基于silica波导光栅的单纤三向器的混合集成研究

通过有源实时监控系统,采用手动和自动相结合的方法,将光纤、silica基阵列波导光栅(AWG)、1310 nm激光器(LD)平台和1490 nm、1550 nm探测器(PD)平台用紫外同化胶混合集成为一新型单纤三向器.在耦合集成过程中,LD在15 mA偏置电流下,三向器的上行出纤功率大约为-4 dBm,LD和波导的耦合效率大约40%;当三向器输入1 550 nm光功率为1 mW,PD在2.6 V反向偏压下,下行输出光电流大约为76 μA,波导和PD的耦合效率大约为42%.三向器中采用了对管PD集成方法.

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

Polarization-Insensitive Silica on Silicon Arrayed Waveguide Grating Design

A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

近空间升华沉积CdTe薄膜的微结构和PL谱

用近空间华法在CdS薄膜上沉积了CdTe薄膜。研究了在两种保护气氛下所沉积的多晶CdTe薄膜在后处理后的微结构、表面形貌及光致发光(PL)谱，并研究了CdTe表面的CdS/CdTe界面的P谱的区别，根据薄膜的微结构对碲化镉在太阳电池中的应用进行了讨论。

MBE CdTe/GaAs光致发光研究

在10K低温下对分子束外延生长的CdTe（111）B/GaAs（100）和CdTe（211）B/GaAs（211）B外延膜进行了光致发光（PL）测量，得到了PL谱和带边激子辐射的精细结构。

（CdTe）m（ZnTe）n-ZnTe多量子阱结构的静压光致发光和共振喇曼散射研究

于2010-11-23批量导入

CdTe/ZnTe应变量子阱的静压光致发光研究

于2010-11-23批量导入

Stress analysis of silica-based arrayed waveguide grating by a finite element method

The stress distribution in silica optical waveguides on silicon is calculated by using finite element method (FEM). The waveguides are mainly subjected to compressive stress along the x direction and the z direction, and it is accumulated near the interfaces between the core and cladding layers. The shift of central wavelength of silica arrayed waveguide grating (AWG) on silicon-substrate with the designed wavelength and the polarization dependence are caused by the stress in the silica waveguides.