HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE
| Data(s) |
1994
|
|---|---|
| Resumo |
Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
CHEN SD; LIN L; HE XZ; XU ZY; LUO CP; XU JZ.HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE,JOURNAL OF CRYSTAL GROWTH ,1994,140(0):287-290 |
| Palavras-Chave | #光电子学 #MOLECULAR-BEAM EPITAXY #FILMS |
| Tipo |
期刊论文 |
