Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers

Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.

铬系催化剂聚合1,3-双烯烃的研究

铬系催化剂是合成1,2-聚丁二烯和3,4-聚异戊二烯的一种主要催化剂体系，1,2-聚丁二烯和3,4-聚异戊二烯是制造高性能轮胎的重要原料。本论文研究了以含氮化合物和含磷化合物为配体的铬催化剂合成1,2-聚丁二烯和3,4-聚异戊二烯的反应规律。 1. 以邻菲咯啉为配体的铬催化剂在己烷中50℃下可获得1,2-结构、顺-1,4-结构和反-1,4-结构单元含量分别约为50%、30%和20%，分子量呈双峰分布的聚丁二烯。改变聚合温度，可有效控制聚合物的1,2-结构含量和分子量及分布。催化剂通过预陈化方式，可有效抑制低聚物的生成。 2. 以亚磷酸二烷基酯为配体的铬催化剂是合成1,2-聚丁二烯的高效催化剂，所得聚合物具有高的1,2-结构含量（> 78%）。改变烷基铝和亚磷酸二烷基酯的结构，可以得到高熔点或低熔点间同1,2-聚丁二烯和无规1,2-聚丁二烯。催化剂以现配方式的活性最高。 3. 以磷酸三苯酯为配体的铬催化剂可获得间同1,2-聚丁二烯，而聚合物中含有低聚物。催化剂以现配方式的活性最高。聚合物的熔点，低聚物的含量与磷酸三苯酯的结构有一定的关系。 4. 以邻菲咯啉为配体的铬催化剂在50℃下聚合异戊二烯，具有高的催化活性，可获得3,4-结构含量约67%的高分子量无规3,4-聚异戊二烯。催化剂的组成对聚合物的微观结构无明显影响。改变聚合温度，可有效控制聚合物的3,4-结构含量和分子量及分布。

铁系催化剂聚合1，3-双烯烃的研究

1，2-聚丁二烯和3，4-聚异戊二烯是制造高性能轮胎的原料。本论文研究了以含磷化合物为第三组份的铁催化剂合成1，2-聚丁二烯和3，4-聚异戊二烯的反应规律：1．以二乙基亚磷酸酷为第三组份的铁催化剂可在己烷中，较高温度（50℃）下聚合1，3-丁二烯。通过控制催化剂组份的配比，可制备间同和无规1，2-聚丁二烯。所得间同1，2-聚丁二烯的1，2-结构含量为91％，间规度为90％；所得无规1，2-聚丁二烯的硫化胶具有优异的抗干、湿滑性能。2．以三苯基磷酸酷为第三组份的铁催化剂是合成高间同1，2一聚丁二烯的高效催化剂。所得聚合物具有高的1，2-结构含量（ca.95％），高的间规度（ca.95％）。聚合物的微观结构与催化剂组成等反应因素无关。3．以二烷基亚磷酸醋为第三组份的铁催化剂可在己烷中，较高温度（50℃）下聚合异戊二烯。二烷基亚磷酸醋中烷基影响聚合活性的顺序为乙基一甲基＞正丁基＞异辛基。所得聚异戊二烯的3，4（含1，2）结构含量保持在60％左右，不受反应条件的影响。4．改性甲基铝氧烷（MMAO）活化的铁催化剂聚合异戊二烯，在相当低的MMAO用量下（Al／Fe=20，摩尔比）即有高的催化活性。溶剂影响聚合活性的顺序为甲苯＞环己烷＞己烷＞二氯甲烷。所得聚异戊二烯的3，4（含1，2）结构含量稳定在60％。

p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益特性的研究

对p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为17.5 cm~(-1),与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂1.3 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义.

1．3μm量子点垂直腔面发射激光器高频响应的优化设计

结合垂直腔面发射激光器（VCSEL）原理以及量子点增益特点，计算了有源层P掺杂结构的量子点VCSEL的材料增益和3dB带宽，发现P掺杂结构可以大大提高频率特性．结合VCSEL激射条件和阈值特性，分析了对VCSEL结构的要求；分析了分布参数对频率特性的影响，对其外部封装提出了要求．设计了高频率响应的含氧化限制层的1．3μm量子点VCSEL结构．

甚短距离光传输（VSR-1）系统色散功率代价的分析

导出了一种用系统10％-90％上升时间所表示的最坏情况下多模光纤色散功率代价的计算方法。将最坏情况下的眼图闭合用光接收器在t0时刻的输出信号波形表示，从而得到了色散功率代价的数学表达式。为了得到光接收器输出信号波形的解析解，假设多模光纤链路是一个低通滤波器，其归一化脉冲响应是高斯形式的。用这种方法对甚短距离光传输系统VSRd的色散功率代价做了计算分析，所得结果可作为最坏情况下VSR-1链路功率预算分析的参考。

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析

结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了不同结构VCSEL的腔内损耗和量子点的模式增益.分析了激光器阈值特性以及氧化限制层对光损耗的影响.设计了含氧化限制层的1.3 μm量子点VCSEL结构.

Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点

用光荧光谱和原子力显微镜测试技术系统研究了在2 nm In0.2Ga0.8As和x ML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌.采用In0.2Ga0.8As与薄层GaAs复合的应力缓冲层,由于减少了晶格失配度致使量子点密度从约1.7×109 cm-2显著增加到约3.8×109cm-2.同时,复合层也有利于提高量子点中In的组份,使量子点的高宽比增加,促进量子点发光峰红移.对于x=10 ML的样品室温下基态发光峰达到1350 nm.