Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T13:41:08Z No. of bitstreams: 1 Self-heating effect in 1.3 mu m p-doped InAsGaAs quantum dot vertical cavity surface emitting lasers.pdf: 267331 bytes, checksum: a4ebdae52c732b536fe679fb71c8be46 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28T13:50:15Z (GMT) No. of bitstreams: 1 Self-heating effect in 1.3 mu m p-doped InAsGaAs quantum dot vertical cavity surface emitting lasers.pdf: 267331 bytes, checksum: a4ebdae52c732b536fe679fb71c8be46 (MD5)

Made available in DSpace on 2010-04-28T13:50:15Z (GMT). No. of bitstreams: 1 Self-heating effect in 1.3 mu m p-doped InAsGaAs quantum dot vertical cavity surface emitting lasers.pdf: 267331 bytes, checksum: a4ebdae52c732b536fe679fb71c8be46 (MD5) Previous issue date: 2010

SERC 0621200015

国际

SERC 0621200015