Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers

Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.

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The authors would like to thank Professor Chang-Zhi Guo of Peking University for beneficial discussions. This work was supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z401), "One-Hundred Talents Program'' of the Chinese Academy of Sciences, and the National Science Foundation of China (Grant No. 60876033).

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The authors would like to thank Professor Chang-Zhi Guo of Peking University for beneficial discussions. This work was supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z401), "One-Hundred Talents Program'' of the Chinese Academy of Sciences, and the National Science Foundation of China (Grant No. 60876033).