A flame surface density approach to large-eddy simulation of premixed turbulent combustion

The flame surface density approach to the modeling of premixed turbulent combustion is well established in the context of Reynolds-averaged simulations. For the future, it is necessary to consider large-eddy simulation (LES), which is likely to offer major advantages in terms of physical accuracy, particularly for unsteady combustion problems. LES relies on spatial filtering for the removal of unresolved phenomena whose characteristic length scales are smaller than the computational grid scale. Thus, there is a need for soundly based physical modeling at the subgrid scales. The aim of this paper is to explore the usefulness of the flame surface density concept as a basis for LES modeling of premixed turbulent combustion. A transport equation for the filtered flame surface density is presented, and models are proposed for unclosed terms. Comparison with Reynolds-averaged modeling is shown to reveal some interesting similarities and differences. These were exploited together with known physics and statistical results from experiment and from direct numerical stimulation in order to gain insight and refine the modeling. The model has been implemented in a combustion LES code together with standard models for scalar and momentum transport. Computational results were obtained for a simple three-dimensional flame propagation test problem, and the relative importance of contributing terms in the modeled equation for flame surface density was assessed. Straining and curvature are shown to have a major influence at both the resolved and subgrid levels.

Comparison of acoustic velocity perturbation measurements using PIV vs. two-microphone technique

Understanding combustion instabilities requires accurate measurements of the acoustic velocity perturbation into injectors. This is often accomplished via the use of the two microphone technique, as this only requires two pressure transducers. However, measurements of the actual velocities emerging from the injectors are not often taken, leaving questions regarding the assumptions about the acoustic velocity. A comparison of velocity measured at downstream of the injector with that of two-microphone technique can show the accuracy and limitations of two-microphone technique. In this paper, velocity measurements are taken using both particle image velocimetry (PIV) and the two-microphone technique in a high pressure facility designed for aeroengine injector measurements. The flow is excited using an area modulation device installed on the choked end of the combustion chamber, with PIV measurements enabled by optical access downstream of the injector through a quartz tube and windows. Acoustic velocity perturbations at the injector are determined by considering the Fourier transformed pressure fluctuations for two microphones installed at a known distance upstream of the injector. PIV measurements are realized by seeding the air flow with micrometric water particles under 2.5 bar pressure at ambient temperature. Phase locked velocity fields are realized by synchronizing the acquisition of PIV images with the revolution of the acoustic modulator using the pressure signal measured at the face of injector. The mean velocity fluctuation is calculated as the difference between maximum and minimum velocities, normalized by the mean velocity of the unforced case. Those values are compared with the peak-to-peak velocity fluctuation amplitude calculated by the two-microphone technique. Although the ranges of velocity fluctuations for both techniques are similar, the variation of fluctuation with forcing frequencies diverges significantly with frequency. The differences can be attributed to several limitations associated with of both techniques, such as the quality of the signal, the signal/noise ratio, the accuracy of PIV measurements and the assumption of isentropic flow of the particle velocity from the plenum through the injector. We conclude that two-microphone methods can be used as a reference value for the velocity fluctuation in low order applications such as flame transfer functions, but not for drawing conclusions regarding the absolute velocity fluctuations in the injector. Copyright © 2013 by ASME.

Interaction of a premixed flame with a liquid fuel film on a wall

© 2004 The Combustion Institute. Published by Elsevier Inc. All rights reserved. In piston engines and in gas turbines, the injection of liquid fuel often leads to the formation of a liquid film on the combustor wall. If a flame reaches this zone, undesired phenomena such as coking may occur and diminish the lifetime of the engine. Moreover, the effect of such an interaction on maximum wall heat fluxes, flame quenching, and pollutant formation is largely unknown. This paper presents a numerical study of the interaction of a premixed flame with a cold wall covered with a film of liquid fuel. Simulations show that the presence of the film leads to a very rich zone at the wall in which the flame cannot propagate. As a result, the flame wall distance remains larger with liquid fuel than it is for a dry wall, and maximum heat fluxes are smaller. The nature of the interaction of flame wall interaction with a liquid fuel is also different from the classical flame/dry wall interaction: it is controlled mainly by chemical mechanisms and not by the thermal quenching effect observed for flames interacting with dry walls: the existence of a very rich zone created above the liquid film is the main mechanism controlling quenching.

Effects of brominated flame retardants and brominated dioxins on steroidogenesis in H295R human adrenocortical carcinoma cell line

Brominated flame retardants (BFRs) and brominated dioxins are emerging persistent organic pollutants that are ubiquitous in the environment and can be accumulated by wildlife and humans. These chemicals can disturb endocrine function. Recent studies have demonstrated that one of the mechanisms of endocrine disruption by chemicals is modulation of steroidogenic gene expression or enzyme activities. In this study, an in vitro assay based on the H295R human adrenocortical carcinoma cell line, which possesses most key genes or enzymes involved in steroidogenesis, was used to examine the effects of five bromophenols, two polybrominated biphenyls (PBBs 77 and 169), 2,3,7,8-tetrabromodibenzo-p-dioxin, and 2,3,7,8-tetrabromodibenzofuran on the expression of 10 key steroidogenic genes. The H295R cells were exposed to various BFR concentrations for 48 h, and the expression of specific genescytochrome P450 (CYP11A, CYP11B2, CYP17, CYP19, and CYP21), 3 beta-hydroxysteroid dehydrogenase (3PHSD2), 17 beta-hydroxysteroid dehydrogenase (17 beta HSD1 and 17 beta HSD4), steroidogenic acute regulatory protein (StAR), and 3-hydroxy-3-methylglutaryl coenzyme A reductase (HMGR)-was quantitatively measured using real-time polymerase chain reaction. Cell viability was not affected at the doses tested. Most of the genes were either up- or down-regulated, to some extent, by BFR exposure. Among the genes tested, 3PHSD2 was the most markedly up-regulated, with a range of magnitude from 1.6- to 20-fold. The results demonstrate that bromophenol, bromobiphenyls, and bromodibenzo-p-dioxin/furan are able to modulate steroidogenic gene expression, which may lead to endocrine disruption.

Modification of two-photon excited fluorescence from quantum dots on SiN photonic crystals

We investigate two-photon excited fluorescence from CdSe quantum dots with a center-emitting wavelength of 655 nm on SiN photonic crystals. We find that two-photon excited fluorescence is enhanced by more than 1 order of magnitude in the vertical direction when a photonic crystal is used compared to the fluorescence spectra in the absence of photonic crystals. The spectrum of two-photon excited fluorescence from quantum dots on SiN photonic crystal is observed to shift to blue compared to that from quantum dots on SiN without photonic crystals. (C) 2010 Optical Society of America

Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals

Two-photon excited fluorescence from CdSe quantum dots on a two-dimensional SiN photonic crystal surface is investigated by using a femtosecond laser. By using a photonic crystal, a 90-fold enhancement in the two-photon excited fluorescence in the vertical direction is achieved. This is the highest enhancement achieved so far in the two-photon excited fluorescence in the vertical direction. The mechanism of the enhancement for two-photon excited fluorescence from quantum dots on photonic crystals is analyzed.

Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system

We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system in a GaAs/Al0.35Ga0.65As heterostructure. While the transverse spin lifetime (T-2(*)) of electrons decreases monotonically with increasing magnetic field, it has a nonmonotonic dependence on the temperature and reaches a peak value of 596 ps at 36 K, indicating the effect of intersubband electron-electron scattering on the electron-spin relaxation.

Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure

By integrating a resonant tunneling diode with a 1.2 mu m-thick slightly doped n-type GaAs layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (PVCR) as high as 36. A vast number of photo-excited holes generated in this 1.2 mu m-thick slightly doped n-type GaAs layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced PVCR.

Selectively excited photoluminescence of GaAs1-xNx single quantum wells

GaAsN bulk and GaAsN/GaAs single quantum wells grown by molecular beam epitaxy are studied by selectively excited photoluminescence (PL) measurements. A significant difference is observed in the PL spectra when the excitation energy is set below or above the band gap of GaAs for the GaAsN/GaAs quantum well samples, while the spectral features of GaAsN bulk are not sensitive to the excitation energy. The observed difference in PL of the GaAsN/GaAs quantum well samples is attributed to the exciton localization effect at the GaAsN/GaAs interfaces, which is directly correlated with the transfer and trap processes of the photogenerated carriers from GaAs into GaAsN through the heterointerfaces. This interface-related exciton localization effect can be greatly reduced by a rapid thermal annealing process, making the PL be dominated by the intrinsic delocalized transition in GaAsN/GaAs. (C) 2003 American Institute of Physics.

Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells

GaAsSb/GaAs single quantum wells grown by molecular-beam epitaxy are studied by selectively excited photoluminescence measurements. We have simultaneously observed the photoluminescence (PL) from both type-I and type-II transitions in the samples. The two transitions exhibit different PL behavior under different excitation energies. As expected, the peak energy of the type-I emission remains constant in the entire excitation energy range we used, while the type-II transition shows a significant blueshift with increasing excitation energy. The observed blueshift can be well explained by an electron-hole charge separation model at interface. This result, along with the excitation-power-dependent PL and the measured longer carrier decay time, provides more direct information on the type-II nature of the band alignment in GaAsSb/GaAs quantum well structures. (C) 2002 American Institute of Physics.

Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well

We have studied the capacitance-voltage characteristics of an optically excited wide quantum well. Both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. This quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined Stark effect.

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.