Selectively excited photoluminescence of GaAs1-xNx single quantum wells
Data(s) |
2003
|
---|---|
Resumo |
GaAsN bulk and GaAsN/GaAs single quantum wells grown by molecular beam epitaxy are studied by selectively excited photoluminescence (PL) measurements. A significant difference is observed in the PL spectra when the excitation energy is set below or above the band gap of GaAs for the GaAsN/GaAs quantum well samples, while the spectral features of GaAsN bulk are not sensitive to the excitation energy. The observed difference in PL of the GaAsN/GaAs quantum well samples is attributed to the exciton localization effect at the GaAsN/GaAs interfaces, which is directly correlated with the transfer and trap processes of the photogenerated carriers from GaAs into GaAsN through the heterointerfaces. This interface-related exciton localization effect can be greatly reduced by a rapid thermal annealing process, making the PL be dominated by the intrinsic delocalized transition in GaAsN/GaAs. (C) 2003 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Luo XD; Tan PH; Xu ZY; Ge WK .Selectively excited photoluminescence of GaAs1-xNx single quantum wells ,JOURNAL OF APPLIED PHYSICS,2003 ,94 (8):4863-4865 |
Palavras-Chave | #半导体物理 #MOLECULAR-BEAM EPITAXY #GAASN ALLOYS #NITROGEN #LUMINESCENCE #PRESSURE #STATES #ENERGY |
Tipo |
期刊论文 |