Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well


Autoria(s): Tang Y; Zheng HZ; Yang FH; Tan PH; Li CF; Li YX
Data(s)

2001

Resumo

We have studied the capacitance-voltage characteristics of an optically excited wide quantum well. Both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. This quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined Stark effect.

Identificador

http://ir.semi.ac.cn/handle/172111/12252

http://www.irgrid.ac.cn/handle/1471x/65096

Idioma(s)

英语

Fonte

Tang Y; Zheng HZ; Yang FH; Tan PH; Li CF; Li YX .Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well ,PHYSICAL REVIEW B,2001 ,63(11):Art.No.113305

Palavras-Chave #半导体物理 #RESONANT-TUNNELING DIODES #SPACER LAYERS #SPECTROSCOPY #DOTS #HETEROSTRUCTURES
Tipo

期刊论文