HIGH-RATE ION ETCHING OF GAAS AND SI AT LOW ION ENERGY BY USING AN ELECTRON-BEAM EXCITED PLASMA SYSTEM
| Data(s) |
1988
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
YU JZ; HARA T; HAMAGAKI M; YOSHINAGA T; AOYAGI Y; NAMBA S.HIGH-RATE ION ETCHING OF GAAS AND SI AT LOW ION ENERGY BY USING AN ELECTRON-BEAM EXCITED PLASMA SYSTEM,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1988,6(6):1626-1631 |
| Palavras-Chave | #光电子学 |
| Tipo |
期刊论文 |
