Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure
| Data(s) |
2007
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|---|---|
| Resumo |
By integrating a resonant tunneling diode with a 1.2 mu m-thick slightly doped n-type GaAs layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (PVCR) as high as 36. A vast number of photo-excited holes generated in this 1.2 mu m-thick slightly doped n-type GaAs layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced PVCR. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhu, H (Zhu Hui); Zheng, HZ (Zheng Hou-Zhi); Li, GR (Li Gui-Rong); Tan, PH (Tan Ping-Heng); Gan, HD (Gan Hua-Dong); Xu, P (Xu Ping); Zhang, F (Zhang Fei); Zhang, H (Zhang Hao); Xiao, WB (Xiao Wen-Bo); Sun, XM (Sun Xiao-Ming) .Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure ,JOURNAL OF INFRARED AND MILLIMETER WAVES,APR 2007,26 (2):81-84 |
| Palavras-Chave | #半导体物理 #photo-excitation |
| Tipo |
期刊论文 |
