Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24T07:15:03Z No. of bitstreams: 1 Delay of the excited state lasing of 1310 nm InAsGaAs quantum dot lasers by facet coating.pdf: 391400 bytes, checksum: e58506e581d2b497a385d9136eccd125 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24T07:17:42Z (GMT) No. of bitstreams: 1 Delay of the excited state lasing of 1310 nm InAsGaAs quantum dot lasers by facet coating.pdf: 391400 bytes, checksum: e58506e581d2b497a385d9136eccd125 (MD5)

Made available in DSpace on 2010-05-24T07:17:42Z (GMT). No. of bitstreams: 1 Delay of the excited state lasing of 1310 nm InAsGaAs quantum dot lasers by facet coating.pdf: 391400 bytes, checksum: e58506e581d2b497a385d9136eccd125 (MD5) Previous issue date: 2010

其它