INDUCED DEFECTS IN GAAS ETCHED BY LOW-ENERGY IONS IN ELECTRON-BEAM EXCITED PLASMA (EBEP) SYSTEM
| Data(s) |
1989
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
YU JZ; MASUI N; YUBA Y; HARA T; HAMAGAKI M; AOYAGI Y; GAMO K; NAMBA S.INDUCED DEFECTS IN GAAS ETCHED BY LOW-ENERGY IONS IN ELECTRON-BEAM EXCITED PLASMA (EBEP) SYSTEM,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,1989,28(11):2391-2395 |
| Palavras-Chave | #光电子学 |
| Tipo |
期刊论文 |
