毫米波高电子迁移率晶体管的二维数值模拟

建立了高电子迁移晶体管(HEMT)的二维数值模型，并用二维数值模拟的方法讨论了AlGaAs/GaAs HEMT中的GaAs沟道层量子阱中二维电子气的物理性质。通过自洽求解薛定谔方程和泊松方程获得了沟道中的电子浓度和横向电场。模拟结果表明栅电压的改变对HEMT器件跨导产生很大的影响。

用于掺铒光纤放大器泵浦源的高性能980nm InGaAs应变量子阱激光器

利用分子束外延(MBE)方法研制出了高质量的InGaAs/AlGaAs应变量子阱激光器外延材料，其最低的阈值电流密度可达到120A/cm~2，激发波长在980nm左右。获得了高性能的适合于掺铒光纤放大器用的980nm量子阱激光器泵浦源，其典型的阈值电流为15mA，外微分量子效率的典型值和最好值分别为0.8mW/mA和10.mW/mA，线性输出功率大于120mW，在20℃-50℃的特征温度T_0为125K。器件在50℃，80mW下的恒功率老化实验表明具有较好的可靠性，与掺铒单模光纤耦合的组合件出纤功率可达63mW。

多量子阱空间光调制器二维列阵

用MBE技术生长GaAs/AlGaAs多量子阱材料,研制出8×8独立寻址反射型空间光调制器列阵,对列阵的光反射谱、光电流谱、电场调制特性及电学特性进行了全面的测试，并对列阵的均匀性进行了分析。

GaAs/GaAlAs量子阱双色红外探测器的光电性质的研究

综述了有关新型的GaAs/AlGaAs体系双色量子阱红外探测器的结构特性和光电特性的研究工作，双色探测器工作在3～5μm及8～12μm大气窗口波段范围，是光伏响应模式和光导响应模式相结合的偏压控制型两端器件，研究内容包括探测器的器件结构特性、红外光吸收特性、红外光电流响应、暗电流、噪声特性和探测率测试分析等等。首次从理论和实验两方面探讨有关量子阱束缚子能带到扩展态中不同虚能级之间的光跃迁问题及光电子输运问题。

异质结电荷注入晶体管

通过对GaAs/AlGaAs异质结电荷注入晶体管结构和工艺的探索研究,以及对器件工作特性的测量分析,在理论上给出了器件过程的物理机制,并对器件结果提出了进一步的改进措施。

GaAs/AIGaAs光子平行存贮器的性能

报告用PnpN型GaAs/AlGaAs结构的光电双稳器件形成的光子平行存贮器单元器件和4×4阵列器件的特性。单元器件的最小维持功耗小于30μW。使器件从“关闭”态翻转到“导通”态所需的光触发功率小于80μW。单元面积160×160μm、间距40μm的存贮器4×4原理性阵列已经研制成功,这是0.85μm波长范围的光子平行存贮器的首次报道。

掺铒光纤放大器泵浦源用980nm量子阱激光器

利用分子束外延(MBE)方法研制出了高质量的InGaAs/GaAs/AlGaAs应变量子阱激光器外延材料,其最低的阈值电流密度可达到140/cm~2,激发波长在980nm左右.通过脊型波导结构的制备,获得了高性能的适合于掺铒光纤放大器用的980nm量子阱激光器泵浦源,其典型的阈值电流和外微分量子效率分别为15mA和0.8mW/mA,基横模的输出功率大于80mW,器件在50℃,80mW的恒功率老化实验表明,器件具有较好的可靠性.通过与掺铒光纤的耦合,其组合件出纤功率可达60mW以上.

窄发散角量子阱激光器的结构设计与分析

对GaAs/AlGaAs量子阱结构激光器中重要的结构参数与远场垂直发散角的关系作了系统的理论计算与分析,提出了实现20°~30°垂直发散角的有效途径,并同时研究了对激光器的光功率限制因子、阈值电流密度等重要参数的影响.

MOCVD生长大功率单量子阱激光器

介绍了MOCVD生长的高质量GaAs和AlAs材料以及(Al)GaAs/AlGaAs分别限制单量子阱激光器.GaAs材料的77K迁移率为122.700cm~2/(V·s),GaAs/AlAs具有均匀陡变的界面.激光器的最大光输出功率为4W,平均光功率密度达4MW/cm~2,斜率效率为1.2W/A,在1W恒功老化4000小时电流增加小于10%,预计寿命可超过两万小时.

量子阱激光器光增益温度关系及对激射特性的影响

计算了不同温度下GaAs/AlGaAs量子阱材料光增益与载流子密度的关系。根据B-D条件:ΔF＞hγ≥E_g+E_(c1)+E_(v1),得到了ΔF、峰值增益光子能量和E_g+E_(v1)与载流子密度的关系,并得到了不同增益的激光器阈值电流温度关系。计算结果解释了实验出现的阈值电流温度的反常特性和波长开关现象,并且与器件温度特性符合。

量子阱光反射光谱的电调制机理

研究了量子阱材料光反射光谱的电调制机理, 根据斯塔克效应, 对量子阱中非激子的带间跃迁和激子跃迁两种情况, 分析了电场引起的介电函数的改变和相应的光反射调制光谱线形, 对GaAs／AlGaAs量子阱所得光反射光谱的实验结果与理论分析基本符合。图4参8

Spin split cyclotron resonance in GaAs quantum wells

The cyclotron resonance (CR) of electrons in GaAs/AlGaAs quantum wells is investigated theoretically to explain a recent CR experiment, where two CR peaks were observed at high magnetic fields when both spin-up and spin-down states of the lowest Landau level are occupied. Our theoretical model takes into account the conduction band non-parabolicity, the electron bulk longitude-optic-phonon coupling, and the self-consistent subband structure. A good agreement is found.

High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m.

Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes

Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.