High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers
| Data(s) |
2000
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|---|---|
| Resumo |
980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m. 980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:00Z (GMT). No. of bitstreams: 1 2935.pdf: 179989 bytes, checksum: 35990d3a60d8ff532fd8af764f31cafb (MD5) Previous issue date: 2000 SPIE. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Xiu ZT; Zhang JM; Ma XY; Yang GW; Shen GD; Chen LH .High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers .见：SPIE-INT SOC OPTICAL ENGINEERING .IN-PLANE SEMICONDUCTOR LASERS IV, 3947,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2000,66-69 |
| Palavras-Chave | #光电子学 #SQW LASERS #INGAASP #POWER #FIBER #NM |
| Tipo |
会议论文 |
