Mode Characteristics for Square Resonators With a Metal Confinement Layer

Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

Origins of magnetism in transition metal doped Cul

Cupric iodide is a p-type semiconductor and has a large band gap. Doping of Mn, Co, and Ni are found to make gamma-CuI ferromagnetic ground state, while Cr-doped and Fe-doped CuI systems are stabilized in antiferromagnetic configurations. The origins of the magnetic ordering are demonstrated successfully by the phenomenological band coupling model based on d-d level repulsions between the dopant ions. Furthermore, using a molecular-orbital bonding model, the electronic structures of the doped CuI are well understood. According to Heisenberg model, high-T-C may be expected for CuI:Mn and CuI:Ni if there are no native defects or other impurities.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.

Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution

We report the synthesis and characterization of Zn-doped InN nanorods by metal-organic chemical vapor deposition. Electron microscopy images show that the InN nanorods are single-crystalline structures and vertically well-aligned. Energy-dispersive X-ray spectroscopy analyses suggest that Zn ions are distributed nonhomogenously in InN nanorods. Simulations based on diffusion model show that the doping concentration along the radial direction of InN nanorod is bowl-like from the exterior to the interior, the doping concentration decreases, and Such dopant distribution result in a bimodal EDXS spectrum of Zn across the nanorod. The study of the mechanism of doping effect is useful for the design of InN-based nanometer devices. Also, high-quality Zn-doped InN nanorods will be very attractive as building blocks for nano-optoelectronic devices.'

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods

The atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. In the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. The question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. Two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. One is a partition method and another is a quasi-Fermi level method. Two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3248262]

Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by Xray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2 molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.

A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

Vacuum pyrolysis of waste tires with basic additives

Granules of waste tires were pyrolyzed tinder vacuum (3.5-10 kPa) conditions, and the effects of temperature and basic additives (Na2CO3, NaOH) on the properties of pyrolysis were thoroughly investigated. It was obvious that with or without basic additives, pyrolysis oil yield increased gradually to a maximum and subsequently decreased with a temperature increase from 450 degrees C to 600 degrees C, irrespective of the addition of basic additives to the reactor. The addition of NaOH facilitated pyrolysis dramatically, as a maximal pyrolysis oil yield of about 48 wt% was achieved at 550 degrees C without the addition of basic additives, while a maximal pyrolysis oil yield of about 50 wt% was achieved at 480 degrees C by adding 3 wt% (w/w, powder/waste tire granules) of NaOH powder. The composition analysis of pyrolytic naphtha (i.b.p. (initial boiling point) similar to 205 degrees C) distilled from pyrolysis oil showed that more dl-limonene was obtained with basic additives and the maximal content of dl-limonene in pyrolysis oil was 12.39 wt% which is a valuable and widely-used fine chemical. However, no improvement in pyrolysis was observed with Na2CO3 addition. Pyrolysis gas was mainly composed of H-2, CO, CH4, CO2, C2H4 and C2H6. Pyrolytic char had a surface area comparable to commercial carbon black, but its proportion of ash (above 11.5 wt%) was much higher.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

手性有机小分子路易斯碱催化剂的设计、合成及其在亚胺不对称还原中的应用

手性胺是合成天然产物和手性药物的重要中间体，亚胺的不对称催化还原是制备光学活性手性胺的最直接有效的方法之一。但是，由于C＝N双键的反应活性较弱以及容易发生E/Z异构等问题，亚胺的不对称催化还原具有很大的挑战性，既具有高对映选择性又具有宽广底物普适性的催化剂很少。 本文分别由手性脯氨酸、哌啶酸、哌嗪酸以及氨基醇出发，设计和合成了一系列结构新颖、合成简便、性能优良的酰胺类有机小分子路易斯碱催化剂，以廉价的三氯氢硅为氢源，用这些催化剂催化亚胺不对称还原，得到了非常优良的收率、对映选择性和前所未有的底物普适性。 文献研究认为，除N-甲酰基外，分子内含有芳香酰胺是能催化亚胺还原的有机小分子路易斯碱催化剂具有较高对映选择性的必要条件，我们研究发现N-甲酰脯氨酸非芳香酰胺类催化剂（包括结构简单的C2-对称型脯氨酰胺类催化剂），对N-芳基酮亚胺的还原可获得达86%的对映选择性，远高于同类芳香酰胺催化剂，证明N-甲酰非芳香酰胺类路易斯碱催化剂在亚胺还原中也能得到高的对映选择性。 在进一步研究中，我们以手性六元哌啶酸为模板，分别设计合成了N-甲酰哌啶酸芳香酰胺和N-甲酰哌啶酸非芳香酰胺两类催化剂，其中芳香酰胺催化剂（S）-N-（甲酰基）哌啶-2-酸-1-萘基酰胺（28）和非芳香酰胺催化剂（2S,1'S,2'S）-N-（甲酰基）-哌啶-2-酸（1',2'-二苯基-2'-乙酰氧基-乙基）酰胺（30）显示出非常优良的催化活性和对映选择性，对于N-芳基芳香酮亚胺的还原，无论是缺电子体系还是富电子体系，绝大部分都能得到很高的收率（达98%）和对映选择性（达96% ee)。特别值得一提的是30对一些脂肪族亚胺和α,β-不饱和亚胺的还原，虽然底物为E/Z混合物，也能得到很高的收率（达93%）和对映选择性（达95% ee)，这样的底物普适性在过渡金属催化体系中也是前所未有的。 现有的催化亚胺还原的高对映选择性催化体系大多仅适用于甲基酮亚胺底物，对位阻较大的非甲基酮亚胺很难获得好的结果。我们以L-哌嗪酸为模板设计和合成出的（S）-N-（甲酰基）-哌嗪-2-酸-4-对叔丁基苯磺酰基-苯基酰胺不但对N-芳基甲基酮亚胺有很好的对映选择性（达90% ee)，而且对于大位阻的N-芳基非甲基酮亚胺有更好的对映选择性（达97% ee)。该催化剂与30在底物普适性方面具有很好的互补性。 我们还设计了基于1,2-二苯基氨基醇为模板的新型N-甲酰路易斯碱有机小分子催化剂，首次发现结构简单的N-甲酰（1S,2R）二苯基氨基醇能较好的催化N-芳基酮亚胺，最高可以得到82%的对映选择性。 针对我们设计合成的结构新颖、性能优良的催化剂，我们对催化机理进行了探讨和解释，提出了几个假想的机理模型。 Catalytic enantioselective reduction of imines represents one of the most straightforward and efficient methods for the preparation of chiral amines, an important intermediate for the synthesis of natural products and chiral drugs. However, asymmetric reduction of imines remains a big challenge and highly enantioselective catalysts with a satisfactorily broad substrate scope remain elusive. Factors contributing to the difficulty of this transformation include the weak reactivity of the C=N bond and the existence of inseparable mixtures of E/Z isomers. Starting from chiral proline, pipecolinic acid, piperazine-2-carboxylic acid and 1,2-diphenyl amino alcohol, a series of structurally simple and easily prepared amides were developed as highly effective Lewis basic organocatalysts for the asymmetric reduction of imines with trichlorosilane as the reducing agent, which promoted the reduction of N-aryl imines with high yields and excellent enantioselectivities with an unprecedented substrate spectrum. In the literature, it has been believed that besides the N-formyl group, the existence of an arylamido group in the structure of Lewis basic organocatalysts is a prerequisite for obtaining high enantioselectivity in the catalytic reduction of imines. However, we found that the N-formyl-L-prolinamides bearing non-arylamido groups, including structurally simple C2-symmetric tetraamides, could also work as effective Lewis basic catalysts to promote the asymmetric reduction of ketimines with high enantioselectivities (up to 86% ee), which are even more enantioselective than the analogues with arylamido groups. In further studies, we developed novel N-formamides with arylamido groups and non-arylmido groups as Lewis basic catalysts using the commercially available L-pipecolinic acid as the template. The catalysts (S)-1-formyl-piperidine-2-carboxylic acid naphthylamide 28 and (2S,1'S,2'S)-acetic acid 2-[(1-formyl-piperidine-2-carbonyl) -amino]-1,2-diphenyl-ethyl ester 30 were found to promote the reduction of a broad range of N-aryl imines in high yields (up to 98%) and excellent ee values (up to 96%) under mild conditions. Furthermore, catalyst 30 also exhibited high enantioselectivities (up to 95% ee) for the challenging aliphatic ketimines and α,β-unsaturated imines despite that these imines exist as E/Z isomeric mixtures. The broad substrate spectrum of this catalyst is unprecedented in catalytic asymmetric imine reduction, including transition-metal-catalyzed hydrogenation processes. Many of the currently available highly enantioselective catalytic systems only tolerate methyl ketimines, which gave poor results for bulkier non-methyl ketimines. Starting from L-piperazine-2-carboxylic acid, we developed (S)-4-(4-tert- butylbenzenesulfonyl)-1-formyl-N-phenyl-piperazine-2-carboxamide as highly enantioselective Lewis basic catalysts for the hydrosilylation of both methyl ketimines and steric bulky non-methyl ketimines. Moreover, higher enantioselectivities were obtained for non-methyl ketimines than methyl ketimines under the catalysis of this catalyst. Thus, this catalyst system complements with 30 in terms of the substrate scope. We also found that easily accessible (1R,2S)-N-formyl-1,2-diphenyl- 2-aminoethanol worked as an effective Lewis basic catalyst in the enantioselective hydrosilylation of ketimines, affording high enantioselectivities (up to 82% ee) for a broad range of ketimines. To rationalize the high efficiencies of the structurally novel catalysts we developed, several catalytic models have been proposed.