The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system
| Data(s) |
2010
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| Resumo |
This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Song HP (Song Huaping), Guo Y (Guo Yan), Yang A (Yang Anli), Wei HY (Wei Hongyuan), Xu XQ (Xu Xiaoqing), Liu JM (Liu Jianming), Yang SY (Yang Shaoyan), Liu XL (Liu Xianglin), Zhu QS (Zhu Qinsheng), Wang ZG (Wang Zhanguo).The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system.CRYSTENGCOMM,2010,12(11):3936-3941 |
| Palavras-Chave | #半导体材料 #INDIUM-PHOSPHIDE NANOWIRES |
| Tipo |
期刊论文 |
