Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

Autoria(s): Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.)
Data(s)

2010
Resumo

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

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This work was supported in part by the National Natural Science Foundation of China under Grants 50802005 and 11074020, by the Program for New Century Excellent Talents in University under Grant NCET-08-0029, by the Ph.D. Program Foundation of Ministry of Education of China under Grant 200800061055, by the Shanghai Science and Technology R&D Fund under Grant 0852nm03300, by the National Basic Research Fund under Grant 2005CB623901, by the Shanghai-Unilever Research and Development Fund under Grant 09520715200, and by the Hong Kong Research Grants Council General Research Funds under Grant CityU 112608. The review of this letter was arranged by Editor M. Passlack.

国内

This work was supported in part by the National Natural Science Foundation of China under Grants 50802005 and 11074020, by the Program for New Century Excellent Talents in University under Grant NCET-08-0029, by the Ph.D. Program Foundation of Ministry of Education of China under Grant 200800061055, by the Shanghai Science and Technology R&D Fund under Grant 0852nm03300, by the National Basic Research Fund under Grant 2005CB623901, by the Shanghai-Unilever Research and Development Fund under Grant 09520715200, and by the Hong Kong Research Grants Council General Research Funds under Grant CityU 112608. The review of this letter was arranged by Editor M. Passlack.
Identificador

http://ir.semi.ac.cn/handle/172111/13922

http://www.irgrid.ac.cn/handle/1471x/105293
Idioma(s)

英语
Fonte

Yang ZC (Yang Z. C.), Huang AP (Huang A. P.), Zheng XH (Zheng X. H.), Xiao ZS (Xiao Z. S.), Liu XY (Liu X. Y.), Zhang XW (Zhang X. W.), Chu PK (Chu Paul K.), Wang WW (Wang W. W.).Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate.IEEE ELECTRON DEVICE LETTERS,2010,31(10):1101-1103
Palavras-Chave #半导体材料 #Electron state density #Fermi-level pinning (FLP) #MIS structures #work function (WF) #WORK FUNCTION
Tipo

期刊论文
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