Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods
Data(s) |
2009
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Resumo |
The atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. In the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. The question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. Two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. One is a partition method and another is a quasi-Fermi level method. Two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3248262] National Basic Research Program of China G2009CB929300 National Natural Science Foundation of China 60821061 60776061U.S. Department of Energy BES, Office of Science DE-AC02-05CH11231 |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Jiang, XW (Jiang, Xiang-Wei); Deng, HX (Deng, Hui-Xiong); Li, SS (Li, Shu-Shen); Luo, JW (Luo, Jun-Wei); Wang, LW (Wang, Lin-Wang) .Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods ,JOURNAL OF APPLIED PHYSICS,OCT 15 2009,106(8):Art.No.084510 |
Palavras-Chave | #半导体物理 #ELECTRONIC-STRUCTURE |
Tipo |
期刊论文 |