High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

The 808nm laser diodes with a broad waveguide are designed and fabricated. The thickness of the Al_(0.35)-Ga_(0.65)As waveguide is increased to 0.9μm. In order to suppress the super modes, the thickness of the Al_(0.55)Ga_(0.45)As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm~(-1). The structures are grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.

A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle

To achieve high optical power as well as low vertical divergence angle, a new kind of optimized large optical cavity (LOC) structure is applied to a ridge waveguide 980nm InGaAs/GaAs/AlGaAs multi-quantum well laser. The optical power density in the waveguide is successfully reduced. The maximum output power is more than 400mW with a slope efficiency of 0.89W/A and the far-field vertical divergence angle is lowered to 23°.

Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular Beam Epitaxy

中科院基金,国家自然科学基金,国家攀登计划

Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/ GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy

国家自然科学基金,国家攀登计划

High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers

于2010-11-23批量导入

Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells

于2010-11-23批量导入

Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing

于2010-11-23批量导入

High power 980 nm InGaAs/AlGaAs strained quantum well lasers

于2010-11-23批量导入

InGaAs/GaAs/InGaP Strained quantum well lasers grown by metalorganic chemical vapor deposition

于2010-11-23批量导入

Low threshold GaAs/AlGaAs double Quantum Well Lasers

于2010-11-23批量导入

Two-dimensional quantum well wire semiconductor laser arrays

于2010-11-23批量导入

Two-wave mixing in resonant photorefractive GaAs/AlGaAs semi-insulating multiple quantum wells

国家自然科学基金

Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.