Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
| Data(s) |
2004
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| Resumo |
Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy. Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:19Z (GMT). No. of bitstreams: 1 2774.pdf: 77117 bytes, checksum: 56439cd109ff1b494cc3109b694a8a6c (MD5) Previous issue date: 2004 SPIE.; Chinese Opt Soc.; Wuhan Municipal Govt. Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc.; Wuhan Municipal Govt. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM .Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well .见：SPIE-INT SOC OPTICAL ENGINEERING .APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2004,594-599 |
| Palavras-Chave | #半导体物理 #GaNAs #SiO2 encapsulation #rapid-thermal-annealing #nitrogen reorganization #MOLECULAR-BEAM EPITAXY #OPTICAL-PROPERTIES #MU-M |
| Tipo |
会议论文 |
