AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy

Autoria(s): 杨国文; 徐遵图; 徐俊英; 张敬明; 肖建伟; 陈良惠
Data(s)

1997
Identificador

http://ir.semi.ac.cn/handle/172111/19431

http://www.irgrid.ac.cn/handle/1471x/104353
Idioma(s)

英语
Fonte

杨国文;徐遵图;徐俊英;张敬明;肖建伟;陈良惠.AlInGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy,半导体学报,1997,18(4):313
Palavras-Chave #半导体器件
Tipo

期刊论文
Acesso ao item digital