Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells
| Data(s) |
2000
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|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:10:49导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:10:49Z (GMT). No. of bitstreams: 1 5452.pdf: 202378 bytes, checksum: 2b7f3b62a982194adec966a824f1da22 (MD5) Previous issue date: 2000 国家自然科学基金,国家863计划 中科院半导体所 国家自然科学基金,国家863计划 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
成步文;李代宗;黄昌俊;张春晖;于卓;余金中;王启明.Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells,半导体学报,2000,21(4):313 |
| Palavras-Chave | #光电子学 |
| Tipo |
期刊论文 |
